Li-wei Wang, Zheng Xu, Fu-jun Zhang, Su-ling Zhao, and Li-fang Lu, Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 475-480. https://doi.org/10.1007/s12613-010-0344-2
Cite this article as:
Li-wei Wang, Zheng Xu, Fu-jun Zhang, Su-ling Zhao, and Li-fang Lu, Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 475-480. https://doi.org/10.1007/s12613-010-0344-2
Li-wei Wang, Zheng Xu, Fu-jun Zhang, Su-ling Zhao, and Li-fang Lu, Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 475-480. https://doi.org/10.1007/s12613-010-0344-2
Citation:
Li-wei Wang, Zheng Xu, Fu-jun Zhang, Su-ling Zhao, and Li-fang Lu, Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 475-480. https://doi.org/10.1007/s12613-010-0344-2
Institute of Optoelectronics Technology, Key Laboratory of Luminescence and Optical Information (Ministry of Education of China), Beijing Jiaotong University, Beijing, 100044, China
The microstructural, optical, and magnetic properties and room-temperature photoluminescence (PL) of Mn-doped ZnO thin films were studied. The chemical compositions were examined by energy dispersive X-ray spectroscopy (EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry (XPS). From the X-ray diffraction (XRD) data of the samples, it can be found that Mn doping does not change the orientation of ZnO thin films. All the films prepared have a wurtzite structure and grow mainly along the c-axis orientation. The grain size and the residual stress were calculated from the XRD results. The optical transmittance of the film decreases with the increase of manganese content in ZnO. The room-temperature photoluminescence of the films shows that the intensity of near band energy (NBE) emission depends strongly on the Mn content. The hysteresis behavior indicates that the films with the Mn content below 9at% are ferromagnetic at room temperature.
Institute of Optoelectronics Technology, Key Laboratory of Luminescence and Optical Information (Ministry of Education of China), Beijing Jiaotong University, Beijing, 100044, China
The microstructural, optical, and magnetic properties and room-temperature photoluminescence (PL) of Mn-doped ZnO thin films were studied. The chemical compositions were examined by energy dispersive X-ray spectroscopy (EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry (XPS). From the X-ray diffraction (XRD) data of the samples, it can be found that Mn doping does not change the orientation of ZnO thin films. All the films prepared have a wurtzite structure and grow mainly along the c-axis orientation. The grain size and the residual stress were calculated from the XRD results. The optical transmittance of the film decreases with the increase of manganese content in ZnO. The room-temperature photoluminescence of the films shows that the intensity of near band energy (NBE) emission depends strongly on the Mn content. The hysteresis behavior indicates that the films with the Mn content below 9at% are ferromagnetic at room temperature.
下载: