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Volume 20 Issue 2
Feb.  2013
数据统计

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Guang Chen, Cheng Song, and Feng Pan, Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions, Int. J. Miner. Metall. Mater., 20(2013), No. 2, pp. 160-165. https://doi.org/10.1007/s12613-013-0708-5
Cite this article as:
Guang Chen, Cheng Song, and Feng Pan, Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions, Int. J. Miner. Metall. Mater., 20(2013), No. 2, pp. 160-165. https://doi.org/10.1007/s12613-013-0708-5
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Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

  • 通讯作者:

    Cheng Song    E-mail: songcheng@mail.tsinghua.edu.cn

  • Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.
  • Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

    + Author Affiliations
    • Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.
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