Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure

Shao-wu Yin, Li Wang, Li-ge Tong, Fu-ming Yang, Yan-hui Li

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    Shao-wu Yin, Li Wang, Li-ge Tong, Fu-ming Yang, and Yan-hui Li, Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure, Int. J. Miner. Metall. Mater., 20(2013), No. 5, pp.493-498. https://dx.doi.org/10.1007/s12613-013-0756-x
    Shao-wu Yin, Li Wang, Li-ge Tong, Fu-ming Yang, and Yan-hui Li, Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure, Int. J. Miner. Metall. Mater., 20(2013), No. 5, pp.493-498. https://dx.doi.org/10.1007/s12613-013-0756-x
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    Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure

    • School of Mechanical Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    • Beijing Key Laboratory of Energy Saving and Emission Reduction for Metallurgical Industry, University of Science and Technology Beijing, Beijing, 100083, China

    基金项目: 

    the Major State Basic Research and Development Program of China (No.2012CB720406).

    supported by the Natural Science Foundation of China (No.51106008)

      通信作者:

      Shao-wu Yin E-mail: yinsw@ustb.edu.cn

    中文摘要

    Silicon nitride (Si3N4) powders were prepared by the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure. Silicon powders of 2.2 μm in average diameter were used as the raw materials. The nitriding temperature was from 1623 to 1823 K, and the reaction time ranged from 0 to 20 min. The phase compositions and morphologies of the products were analyzed by X-ray diffraction and scanning electron microscopy, respectively. The effects of nitriding temperature and reaction time on the conversion rate of silicon were determined. Based on the shrinking core model as well as the relationship between the conversion rate of silicon and the reaction time at different temperatures, a simple model was derived to describe the reaction between silicon and nitrogen. The model revealed an asymptotic exponential trend of the silicon conversion rate with time. Three kinetic parameters of silicon nitridation at atmospheric pressure were calculated, including the pre-exponential factor (2.27 cm·s−1) in the Arrhenius equation, activation energy (114 kJ·mol−1), and effective diffusion coefficient (6.2×10−8 cm2·s−1). A formula was also derived to calculate the reaction rate constant.

     

    Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure

    Author Affilications

      • School of Mechanical Engineering, University of Science and Technology Beijing, Beijing, 100083, China

      • Beijing Key Laboratory of Energy Saving and Emission Reduction for Metallurgical Industry, University of Science and Technology Beijing, Beijing, 100083, China

    • Funds: 

      the Major State Basic Research and Development Program of China (No.2012CB720406).

      supported by the Natural Science Foundation of China (No.51106008)

    • Received: 17 July 2012; Revised: 09 August 2012; Accepted: 11 October 2012;
    Silicon nitride (Si3N4) powders were prepared by the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure. Silicon powders of 2.2 μm in average diameter were used as the raw materials. The nitriding temperature was from 1623 to 1823 K, and the reaction time ranged from 0 to 20 min. The phase compositions and morphologies of the products were analyzed by X-ray diffraction and scanning electron microscopy, respectively. The effects of nitriding temperature and reaction time on the conversion rate of silicon were determined. Based on the shrinking core model as well as the relationship between the conversion rate of silicon and the reaction time at different temperatures, a simple model was derived to describe the reaction between silicon and nitrogen. The model revealed an asymptotic exponential trend of the silicon conversion rate with time. Three kinetic parameters of silicon nitridation at atmospheric pressure were calculated, including the pre-exponential factor (2.27 cm·s−1) in the Arrhenius equation, activation energy (114 kJ·mol−1), and effective diffusion coefficient (6.2×10−8 cm2·s−1). A formula was also derived to calculate the reaction rate constant.

     

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