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Volume 20 Issue 11
Nov.  2013
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U. Alver, H. Yaykaşlı, S. Kerli, and A. Tanrıverdi, Synthesis and characterization of boron-doped NiO thin films produced by spray pyrolysis, Int. J. Miner. Metall. Mater., 20(2013), No. 11, pp. 1097-1101. https://doi.org/10.1007/s12613-013-0839-8
Cite this article as:
U. Alver, H. Yaykaşlı, S. Kerli, and A. Tanrıverdi, Synthesis and characterization of boron-doped NiO thin films produced by spray pyrolysis, Int. J. Miner. Metall. Mater., 20(2013), No. 11, pp. 1097-1101. https://doi.org/10.1007/s12613-013-0839-8
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Synthesis and characterization of boron-doped NiO thin films produced by spray pyrolysis

  • 通讯作者:

    U. Alver    E-mail: alver@ksu.edu.tr

  • Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30–50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.
  • Synthesis and characterization of boron-doped NiO thin films produced by spray pyrolysis

    + Author Affiliations
    • Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30–50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.
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