Rui Yang, Wan-qi Jie, and Hang Liu, Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth, Int. J. Miner. Metall. Mater., 22(2015), No. 7, pp. 755-761. https://doi.org/10.1007/s12613-015-1131-x
Cite this article as:
Rui Yang, Wan-qi Jie, and Hang Liu, Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth, Int. J. Miner. Metall. Mater., 22(2015), No. 7, pp. 755-761. https://doi.org/10.1007/s12613-015-1131-x
Rui Yang, Wan-qi Jie, and Hang Liu, Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth, Int. J. Miner. Metall. Mater., 22(2015), No. 7, pp. 755-761. https://doi.org/10.1007/s12613-015-1131-x
Citation:
Rui Yang, Wan-qi Jie, and Hang Liu, Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth, Int. J. Miner. Metall. Mater., 22(2015), No. 7, pp. 755-761. https://doi.org/10.1007/s12613-015-1131-x
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm-3, a mobility of approximately 300 cm2·V-1·s-1, and a resistivity of approximately 102 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 µm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm-3, a mobility of approximately 300 cm2·V-1·s-1, and a resistivity of approximately 102 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 µm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.
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