留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码
Volume 23 Issue 3
Mar.  2016
数据统计

分享

计量
  • 文章访问数:  351
  • HTML全文浏览量:  120
  • PDF下载量:  14
  • 被引次数: 0
Hosein Kafashan, Farid Jamali-Sheini, Reza Ebrahimi-Kahrizsangi, and Ramin Yousefi, Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties, Int. J. Miner. Metall. Mater., 23(2016), No. 3, pp. 348-357. https://doi.org/10.1007/s12613-016-1244-x
Cite this article as:
Hosein Kafashan, Farid Jamali-Sheini, Reza Ebrahimi-Kahrizsangi, and Ramin Yousefi, Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties, Int. J. Miner. Metall. Mater., 23(2016), No. 3, pp. 348-357. https://doi.org/10.1007/s12613-016-1244-x
引用本文 PDF XML SpringerLink

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

  • 通讯作者:

    Farid Jamali-Sheini    E-mail: faridjamali@iau.ahvaz.ac.ir

    Reza Ebrahimi-Kahrizsangi    E-mail: rezaebrahimi@iaun.ac.ir

  • Tin sulfide (SnS) thin films were prepared by electrodeposition onto fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials (E) and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The FESEM images demonstrated that changes in the deposition potential (E) and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis (EDXA) results showed that the Sn/S atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an Sn/S atomic ratio approximately equal to 1, the optimal Sn2+/S2O32- molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy (Eg) were studied using PL and UV–Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared (IR) region. The UV–Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.
  • Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

    + Author Affiliations
    • Tin sulfide (SnS) thin films were prepared by electrodeposition onto fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials (E) and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The FESEM images demonstrated that changes in the deposition potential (E) and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis (EDXA) results showed that the Sn/S atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an Sn/S atomic ratio approximately equal to 1, the optimal Sn2+/S2O32- molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy (Eg) were studied using PL and UV–Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared (IR) region. The UV–Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.
    • loading

    Catalog


    • /

      返回文章
      返回