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Volume 26 Issue 10
Oct.  2019
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文章导航 >  矿物冶金与材料学报（英文）  > 2019  >  26(10): 1195-1205
Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin,  and Zhan-guo Wang, Recent progress in diamond-based MOSFETs, Int. J. Miner. Metall. Mater., 26(2019), No. 10, pp. 1195-1205. https://doi.org/10.1007/s12613-019-1843-4
Cite this article as:
Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin,  and Zhan-guo Wang, Recent progress in diamond-based MOSFETs, Int. J. Miner. Metall. Mater., 26(2019), No. 10, pp. 1195-1205. https://doi.org/10.1007/s12613-019-1843-4
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Recent progress in diamond-based MOSFETs

  • Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China

  • Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

  • Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

  • Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

  • 通讯作者:

    Cheng-ming Li    E-mail: chengmli@mater.ustb.edu.cn

    Peng Jin    E-mail: pengjin@semi.ac.cn

  • Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are introduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.
    • Invited Review

    Recent progress in diamond-based MOSFETs

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      Abstract
    • Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are introduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.
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