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Volume 29 Issue 4
Apr.  2022

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Zhenxing Liu, Fangjie Deng, Yuan Zhou, Yanjie Liang, Cong Peng, Bing Peng, Feiping Zhao, Zhihui Yang,  and Liyuan Chai, Effect of transport agent boron triiodide on the synthesis and crystal quality of boron arsenide, Int. J. Miner. Metall. Mater., 29(2022), No. 4, pp. 662-670. https://doi.org/10.1007/s12613-022-2438-z
Cite this article as:
Zhenxing Liu, Fangjie Deng, Yuan Zhou, Yanjie Liang, Cong Peng, Bing Peng, Feiping Zhao, Zhihui Yang,  and Liyuan Chai, Effect of transport agent boron triiodide on the synthesis and crystal quality of boron arsenide, Int. J. Miner. Metall. Mater., 29(2022), No. 4, pp. 662-670. https://doi.org/10.1007/s12613-022-2438-z
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研究论文

传输剂三碘化硼对砷化硼合成和晶体质量的影响

  • 通讯作者:

    梁彦杰    E-mail: LiangyanjieCSU@163.com

    柴立元    E-mail: lychai@csu.edu.cn

文章亮点

  • (1) 系统研究了三碘化硼对砷化硼合成反应的加速作用。
  • (2) 解析了三碘化硼对砷化硼晶体形貌和微观结构缺陷的优化作用。
  • (3) 制备了几十微米级单晶砷化硼晶种。
  • 立方砷化硼作为一种新兴的高热导率半导体材料,在高性能电子器件领域的潜在应用引起了研究者的广泛关注。然而,可控制备砷化硼单晶体的相关技术成为制约其应用和发展的关键。本文旨在研究一种新的传输剂对制备单晶砷化硼的影响。采用三碘化硼作为传输剂合成并制备了具有单晶特性的砷化硼晶体。研究结果表明,三碘化硼和常用的传输剂单质碘都能加速合成砷化硼,在820°C、1.5 MPa的条件下三碘化硼可将砷化硼的的质量分数从不添加传输剂时的约12%提高到90%以上,远超温度和压力的加速效果。形貌与结构表征结果表明,传输剂可减小10%~20%的拉曼谱和X射线衍射谱的半峰宽,显著提高晶体质量。其中,碘化硼消除了单质碘引起的砷化硼晶体团聚生长,将晶体内孪晶尺寸从约50 nm减小至约15 nm, 并协调硼砷结合比例,使砷化硼晶体的化学计量比(约0.990)接近理论值1. 这种协调作用也影响晶面层间距的变化,使{111}晶面层间距维持在0.275 nm (理论值0.276 nm),小于无传输剂(0.280 nm)和使用单质碘传输剂(0.286 nm)的影响。进一步通过化学气相传输法,利用传输剂三碘化硼生长了数十微米尺寸的单晶砷化硼,验证了三碘化硼传输剂的应用效果。为生长微米级单晶砷化硼晶种提供了一种快速、简便的方法。
  • Research Article

    Effect of transport agent boron triiodide on the synthesis and crystal quality of boron arsenide

    + Author Affiliations
    • Cubic boron arsenide (BAs) has attracted great attention due to its high thermal conductivity, however, its controllable, stable, and ideal preparation remains challenging. Herein, we investigated the effect of iodine-containing transport agents I2 and boron triiodide (BI3) on BAs synthesized and grown through chemical vapor transport. Results show that similar to the commonly used I2, BI3 accelerates the synthesis and improves the mass fraction of BAs from ~12% to over 90% at 820°C and 1.5 MPa, a value beyond the promoting effect of only increasing temperature and pressure. Both agents enhance the quality of BAs crystals by reducing the full width at half maximum by up to 10%–20%. I2 agglomerates the grown crystals with twin defects (~50 nm wide), and BI3 improves the crystal anisotropy and element uniformity of BAs crystals with narrow twins (~15 nm wide) and increases the stoichiometry ratio (~0.990) to almost 1. Owing to the boron interstitials from the excessive boron supply, the spacing of layers in {111} increases to 0.286 nm in the presence of I2. Owing to its coordinated effect, BI3 only slightly influences the layer spacing at 0.275 nm, which is close to the theoretical value of 0.276 nm. In the chemical vapor transport, the anisotropic crystals with flat surfaces exhibit single-crystal characteristics under the action of BI3. Different from that of I2, the coordinated effect of BI3 can promote the efficient preparation of high-quality BAs crystal seeds and facilitate the advanced application of BAs.
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    • Supplementary Information s12613-022-2438-z.docx
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