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Volume 30 Issue 6
Jun.  2023

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Yunjie Liu, Yupeng Wu, Fuhai Guo, Yingming Liu, Shirong Zhao, Siqi Li, Weizhuo Yu, and Lanzhong Hao, Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1217-1224. https://doi.org/10.1007/s12613-023-2600-2
Cite this article as:
Yunjie Liu, Yupeng Wu, Fuhai Guo, Yingming Liu, Shirong Zhao, Siqi Li, Weizhuo Yu, and Lanzhong Hao, Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1217-1224. https://doi.org/10.1007/s12613-023-2600-2
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研究论文

具有高灵敏度和快速响应的WS2/Si异质结光敏型位置探测器件

  • 通讯作者:

    郝兰众    E-mail: haolanzhong@upc.edu.cn

文章亮点

  • (1) 研制出柔性WS2/Si异质结光敏型位置探测器。
  • (2) 系统深入研究了器件光电响应与位置探测特性。
  • (3) 利用界面模型阐明了器件工作机理。
  • 由于其优良的电输运和光吸收性能,Si半导体在研制高效光敏型位置探测器件领域获得了广泛关注和大量研究。然而,常规较大厚度(~200 μm)的晶体Si又同时具有较强的刚性和脆性等特征,无法进行弯曲操作,严重限制了它在新一代柔性光电子器件方面的应用。为此,本文报道了一种晶体Si的各向同性碱液刻蚀方法,加工形成了超薄柔性Si,并进一步采用磁控溅射技术在其表面沉积WS2薄膜,从而成功研制出一种柔性WS2/Si异质结光电位置探测器。得益于界面内建电场对载流子输运能力的促进作用,所制备器件在较宽光谱范围内(450~1350 nm)表现出了突出的位置敏感性能,其位置敏感度达到~539.8 mV·mm-1,响应时间仅2.3 μs。尤其是,所制备器件展现出了较强的柔性可特征:经过200个周期的弯曲后,器件性能无明显衰减。
  • Research Article

    Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed

    + Author Affiliations
    • Si-based optical position-sensitive detectors (PSDs) have stimulated the interest of researchers due to their wide range of practical applications. However, due to the rigidity and fragility of Si crystals, the applications of flexible PSDs have been limited. Therefore, we presented a flexible broadband PSD based on a WS2/Si heterostructure for the first time. A scalable sputtering method was used to deposit WS2 thin films onto the etched ultrathin crystalline Si surface. The fabricated flexible PSD device has a broad spectral response in the wavelength range of 450–1350 nm, with a high position sensitivity of ~539.8 mV·mm−1 and a fast response of 2.3 μs, thanks to the strong light absorption, the built-in electrical field at the WS2/Si interface, and facilitated transport. Furthermore, mechanical-bending tests revealed that after 200 mechanical-bending cycles, the WS2/Si PSDs have excellent mechanical flexibility, stability, and durability, demonstrating the great potential in wearable PSDs with competitive performance.
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    • Supplementary Information-s12613-023-2600-2.docx
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