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Volume 30 Issue 10
Oct.  2023
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文章导航 >  矿物冶金与材料学报（英文）  > 2023  >  30(10): 1965-1972
Xiaomeng Li, Pengcheng Jia, Fanwen Meng, Xingyu Zhang, Yang Tang, Bo Song, Chang Gao, Liang Qin, Feng Teng,  and Yanbing Hou, Propylamine hydrobromide passivated tin-based perovskites to efficient solar cells, Int. J. Miner. Metall. Mater., 30(2023), No. 10, pp. 1965-1972. https://doi.org/10.1007/s12613-023-2604-y
Cite this article as:
Xiaomeng Li, Pengcheng Jia, Fanwen Meng, Xingyu Zhang, Yang Tang, Bo Song, Chang Gao, Liang Qin, Feng Teng,  and Yanbing Hou, Propylamine hydrobromide passivated tin-based perovskites to efficient solar cells, Int. J. Miner. Metall. Mater., 30(2023), No. 10, pp. 1965-1972. https://doi.org/10.1007/s12613-023-2604-y
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研究论文

丙胺氢溴酸盐钝化高效锡基钙钛矿太阳能电池

文章亮点

  • (1) 丙胺氢溴酸盐钝化锡基钙钛矿薄膜的缺陷。
  • (2) 丙胺氢溴酸盐使器件的平均短路电流密度明显提升。
  • (3) 器件的稳定性得以提升，滞后效应可忽略不计。
  • 钙钛矿太阳能电池由于其较高的光电转换效率、简单的制造工艺和低廉的生产成本，已成为最有前途的第三代太阳能电池之一。然而，铅元素的毒性极大程度上限制了其商业价值，因此，开发低毒性的锡基器件对钙钛矿太阳能电池的商业可行性至关重要。由于卤化锡是一种更强的路易斯酸，其结晶速率极快，导致形成大量缺陷，影响锡基钙钛矿太阳能电池的器件性能。在此，将丙胺氢溴酸盐（propylamine hydrobromide, PABr）作为添加剂添加到钙钛矿前驱体溶液中，以钝化缺陷并制备更均匀、致密的钙钛矿薄膜。由于丙胺阳离子尺寸较大而无法进入钙钛矿晶格，因此，它们仅存在于晶界处以钝化表面缺陷并促进晶体在优选方向上生长。PABr添加剂通过减少缺陷引起的载流子复合，将平均短路电流密度从19.45 mA·cm−2 提高到25.47 mA·cm−2。此外，经过丙胺氢溴酸盐钝化后，器件的长期光照稳定性得到了提升，滞后效应可忽略不计，PABr的加入使光电转换效率达到9.35%。
    • Research Article

    Propylamine hydrobromide passivated tin-based perovskites to efficient solar cells

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      Abstract
    • The development of tin-based devices with low toxicity is critical for the commercial viability of perovskite solar cells. However, because tin halide is a stronger Lewis acid, its crystallization rate is extremely fast, resulting in the formation of numerous defects that affect the device performance of tin-based perovskite solar cells. Herein, propylamine hydrobromide (PABr) was added to the perovskite precursor solution as an additive to passivate defects and fabricate more uniform and dense perovskite films. Because propylamine cations are too large to enter the perovskite lattices, they only exist at the grain boundary to passivate surface defects and promote crystal growth in a preferred orientation. The PABr additive raises the average short-circuit current density from 19.45 to 25.47 mA·cm−2 by reducing carrier recombination induced by defects. Furthermore, the device’s long-term illumination stability is improved after optimization, and the hysteresis effect is negligible. The addition of PABr results in a power conversion efficiency of 9.35%.
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