直流反应溅射制备氧化钆掺杂氧化铈薄膜及其在固体氧化物燃料电池中的应用

梁富源; 杨嘉然; 王海庆; 武俊伟

doi:10.1007/s12613-023-2620-y

Volume 30 Issue 6

Jun. 2023

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文章导航 > 矿物冶金与材料学报（英文） > 2023 > 30(6): 1190-1197

Fuyuan Liang, Jiaran Yang, Haiqing Wang, and Junwei Wu, Fabrication of Gd₂O₃-doped CeO₂ thin films through DC reactive sputtering and their application in solid oxide fuel cells, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1190-1197. https://doi.org/10.1007/s12613-023-2620-y

Cite this article as:

Fuyuan Liang, Jiaran Yang, Haiqing Wang, and Junwei Wu, Fabrication of Gd2O3-doped CeO2 thin films through DC reactive sputtering and their application in solid oxide fuel cells, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1190-1197. https://doi.org/10.1007/s12613-023-2620-y

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研究论文

直流反应溅射制备氧化钆掺杂氧化铈薄膜及其在固体氧化物燃料电池中的应用

哈尔滨工业大学(深圳)材料科学与工程学院，深圳 518055，中国

* 共同第一作者

通讯作者:
武俊伟 E-mail: junwei.wu@hit.edu.cn

文章亮点

(1) 通过反应溅射制备了GDC薄膜并确定了氧气流量对薄膜质量的影响。

(2) 研究了GDC薄膜作为阻挡层对SOFC中Sr元素迁移以及电化学性能的影响。

(3) 探究了GDC薄膜作为子层对不锈钢/保护涂层体系氧化行为的影响。

中文摘要

物理气相沉积(physical vapor deposition, PVD)工艺可用于制备高质量氧化钆掺杂氧化铈(Gd₂O₃-doped CeO₂, GDC)薄膜。在各种物理气相沉积的方法中，反应溅射具有许多独特的优势，如沉积速率较快且易于大规模扩展实现工业化应用等。本文通过使用钆铈合金(Gd_0.2Ce_0.8 (at%))靶材的反应溅射成功制备了GDC薄膜，并研究了其在固体氧化物电池(solid oxide fuel cell)中的应用，包括作为氧化钇掺杂的氧化锆(yttria-stabilized zirconia, YSZ)与La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ之间的阻挡层以及作为不锈钢/保护涂层体系中的子层。首先确定了钆铈合金靶材的直流反应溅射行为，随后以NiO–YSZ/YSZ半电池为基体研究了氧气流量对于退火后GDC薄膜质量的影响。研究结果表明反应溅射无需高温烧结即可获得薄且致密的GDC阻挡层，与具有丝网印刷GDC阻挡层的电池相比，具有反应溅射GDC阻挡层的电池显示出了更加优异的电化学性能。此外，面电阻测试结果表明在SUS441连接体和Mn–Co尖晶石保护涂层之间插入GDC子层有助于降低SUS441在工作温度下的氧化速率。

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Research Article

Fabrication of Gd₂O₃-doped CeO₂ thin films through DC reactive sputtering and their application in solid oxide fuel cells

+ Author Affiliations

Abstract

Abstract

Physical vapor deposition (PVD) can be used to produce high-quality Gd₂O₃-doped CeO₂ (GDC) films. Among various PVD methods, reactive sputtering provides unique benefits, such as high deposition rates and easy upscaling for industrial applications. GDC thin films were successfully fabricated through reactive sputtering using a Gd_0.2Ce_0.8 (at%) metallic target, and their application in solid oxide fuel cells, such as buffer layers between yttria-stabilized zirconia (YSZ)/La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ and as sublayers in the steel/coating system, was evaluated. First, the direct current (DC) reactive-sputtering behavior of the GdCe metallic target was determined. Then, the GDC films were deposited on NiO–YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films. The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering. Furthermore, the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer. In addition, the insertion of a GDC sublayer between the SUS441 interconnects and the Mn–Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures, according to the area-specific resistance tests.
- solid oxide fuel cell;
- physical vapor deposition;
- Gd₂O₃-doped CeO₂;
- metallic interconnects;
- electrical conductivity

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References(44)

References

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直流反应溅射制备氧化钆掺杂氧化铈薄膜及其在固体氧化物燃料电池中的应用

文章亮点

中文摘要

Fabrication of Gd₂O₃-doped CeO₂ thin films through DC reactive sputtering and their application in solid oxide fuel cells

Abstract

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