磁控溅射制备的微晶钴薄膜的组织结构及磁性能

宋克睿; 李周; 方梅; 肖柱; 雷前

doi:10.1007/s12613-023-2715-5

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文章导航 > 矿物冶金与材料学报（英文） > 2024 > 31(2): 384-394

Kerui Song, Zhou Li, Mei Fang, Zhu Xiao, and Qian Lei, Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering, Int. J. Miner. Metall. Mater., 31(2024), No. 2, pp. 384-394. https://doi.org/10.1007/s12613-023-2715-5

Cite this article as:

Kerui Song, Zhou Li, Mei Fang, Zhu Xiao, and Qian Lei, Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering, Int. J. Miner. Metall. Mater., 31(2024), No. 2, pp. 384-394. https://doi.org/10.1007/s12613-023-2715-5

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研究论文

磁控溅射制备的微晶钴薄膜的组织结构及磁性能

1)
中南大学材料科学与工程学院, 长沙 410083, 中国
2)
中南大学粉末冶金国家重点实验室, 长沙 410083, 中国
3)
中南大学先进材料超微结构与超快过程研究所, 长沙 410083, 中国
4)
有色金属材料科学与工程教育部重点实验室, 长沙 410083, 中国

通讯作者:
肖柱 E-mail: xiaozhumse@163.com

文章亮点

(1) 系统地研究了磁控溅射压强及功率对纯钴薄膜微观组织的影响规律；

(2) 发现了改变溅射压强及功率可调控纯钴薄膜磁各向异性，磁滞回线方度，和矫顽力；

(3) 通过微观组织将溅射压强及功率与纯钴薄膜电磁性能相联系。

中文摘要

通过直流磁控溅射法制备了纯钴薄膜，研究了溅射功率和压强对薄膜微观组织结构和电磁性能的影响。随着溅射功率从15 W增加到60 W，钴薄膜由非晶转变为了微晶，同时晶间孔隙宽度显著增加。这导致了电阻率降低65%，矫顽力从162 Oe上升至293 Oe，以及单轴磁各向异性消失。随着溅射压强从1.6 Pa降低至0.2 Pa，晶粒尺寸显著增加，电阻率从377 μΩ⋅cm大幅度降低至37 μΩ⋅cm。同时由于缺陷宽度的增加，矫顽力从67 Oe大幅上升至280 Oe，由此建立了一个通过面缺陷宽度定量计算纯钴薄膜的矫顽力的模型。此外，在0.2 Pa和0.4 Pa的溅射压强下，制备了具有明显的单轴磁各向异性的多晶纯钴薄膜，这种本因在非晶薄膜中出现的现象的产生被归因于高的微观内应力。

关键词:

Research Article

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

+ Author Affiliations

1)
School of Materials Science and Engineering, Central South University, Changsha 410083, China
2)
State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
3)
Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and electronics, Central South University, Changsha 410083, China
4)
Key Laboratory of Non-Ferrous Metal Materials Science and Engineering, Ministry of Education, Changsha 410083, China

All authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Corresponding author:
Zhu Xiao E-mail: xiaozhumse@163.com
Received: 18 April 2023; Revised: 6 June 2023; Accepted: 26 July 2023; Available online: 27 July 2023

Abstract

Abstract

Pure cobalt (Co) thin films were fabricated by direct current magnetron sputtering, and the effects of sputtering power and pressure on the microstructure and electromagnetic properties of the films were investigated. As the sputtering power increases from 15 to 60 W, the Co thin films transition from an amorphous to a polycrystalline state, accompanied by an increase in the intercrystal pore width. Simultaneously, the resistivity decreases from 276 to 99 μΩ·cm, coercivity increases from 162 to 293 Oe, and in-plane magnetic anisotropy disappears. As the sputtering pressure decreases from 1.6 to 0.2 Pa, grain size significantly increases, resistivity significantly decreases, and the coercivity significantly increases (from 67 to 280 Oe), which can be attributed to the increase in defect width. Correspondingly, a quantitative model for the coercivity of Co thin films was formulated. The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy, which is primarily attributable to increased microstress.
- cobalt thin film;
- magnetron sputtering;
- microstructure;
- electromagnetic properties

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