高温下Al–SiC复合材料的氧化机理研究

韩基铄; 李勇; 马晨红; 郑清瑶; 张秀华; 吴晓芳

doi:10.1007/s12613-023-2778-3

Volume 31 Issue 9

Sep. 2024

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文章导航 > 矿物冶金与材料学报（英文） > 2024 > 31(9): 2077-2087

Jishuo Han, Yong Li, Chenhong Ma, Qingyao Zheng, Xiuhua Zhang, and Xiaofang Wu, Study on the oxidation mechanism of Al–SiC composite at elevated temperature, Int. J. Miner. Metall. Mater., 31(2024), No. 9, pp. 2077-2087. https://doi.org/10.1007/s12613-023-2778-3

Cite this article as:

Jishuo Han, Yong Li, Chenhong Ma, Qingyao Zheng, Xiuhua Zhang, and Xiaofang Wu, Study on the oxidation mechanism of Al–SiC composite at elevated temperature, Int. J. Miner. Metall. Mater., 31(2024), No. 9, pp. 2077-2087. https://doi.org/10.1007/s12613-023-2778-3

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研究论文

高温下Al–SiC复合材料的氧化机理研究

1)
北京科技大学材料科学与工程学院, 北京 100083, 中国
2)
维苏威高级陶瓷(中国)有限公司, 苏州 215000, 中国

通讯作者:
李勇 E-mail: lirefractory@vip.sina.com

文章亮点

(1) 系统研究了 Al–SiC 复合材料高温下的氧化机理。

(2) 铝的引入可增强碳化硅的高温抗氧化性并探究其作用机理。

(3) Al–SiC 复合材料可被用作陶瓷烧成用新型窑具。

中文摘要

本文在空气条件下分别于1100°C、1300°C和1500°C烧结树脂结合Al–SiC复合材料，探究了其氧化机理，并建立了反应模型。随着温度升高，Al–SiC复合材料的抗氧化性能明显增强，试样外部的SiC仅发生轻微的局部氧化，内部存在低温亚稳相Al₄C₃向高温稳定相Al₄SiC₄的转变。在1100°C，试样内部Al与残C反应生成Al₄C₃。升至1300°C，高温以及低氧分压导致SiC发生活性氧化。随着反应进行，内部气相组成为Al₂O(g) + CO(g) + SiO(g)。当Al₄C₃形成后，CO(g)和SiO(g)在Al₄C₃表面不断沉积，并最终将其转变为Al₄SiC₄。在1500°C，试样外层形成了一层由SiC和Al₄SiC₄晶须共同组成的致密层，切断了环境中氧气向试样内层的扩散通道。高温诱导 SiC的活性氧化反应加速，更多的气相参与反应合成Al₄SiC₄，最终在SiC颗粒间形成了相互堆积的六方片状Al₄SiC₄。Al的引入不仅提高了SiC的高温抗氧化性能，同时原位生成的非氧化物在微观尺度上实现了均匀分散，使其与SiC稳定结合。

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Research Article

Study on the oxidation mechanism of Al–SiC composite at elevated temperature

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Abstract

Abstract

Resin-bonded Al–SiC composite was sintered at 1100, 1300, and 1500°C in the air, the oxidation mechanism was investigated. The reaction models were also established. The oxidation resistance of the Al–SiC composite was significantly enhanced with temperature increase. SiC in the exterior of the composite was partially oxidized slightly, while the transformation of metastable Al₄C₃ to stable Al₄SiC₄ existed in the interior. At 1100°C, Al in the interior reacted with residual C to form Al₄C₃. With increasing to 1300°C, high temperature and low oxygen partial pressure lead to active oxidation of SiC, and internal gas composition transforms to Al₂O(g) + CO(g) + SiO(g) as the reaction proceeds. After Al₄C₃ is formed, CO(g) and SiO(g) are continuously deposited on its surface, transforming to Al₄SiC₄. At 1500°C, a dense layer consisting of SiC and Al₄SiC₄ whiskers is formed which cuts off the diffusion channel of oxygen. The active oxidation of SiC is accelerated, enabling more gas to participate in the synthesis of Al₄SiC₄, eventually forming hexagonal lamellar Al₄SiC₄ with mutual accumulation between SiC particles. Introducing Al enhances the oxidation resistance of SiC. In addition, the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.
- Al–SiC composite;
- kiln furniture;
- Al₄SiC₄;
- Al₄C₃;
- oxidation mechanism

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