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Volume 31 Issue 10
Oct.  2024
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文章导航 >  矿物冶金与材料学报（英文）  > 2024  >  31(10): 2263-2273
Dongfei Lu, Guoqiang Xi, Hangren Li, Jie Tu, Xiuqiao Liu, Xudong Liu, Jianjun Tian,  and Linxing Zhang, Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy, Int. J. Miner. Metall. Mater., 31(2024), No. 10, pp. 2263-2273. https://doi.org/10.1007/s12613-024-2915-7
Cite this article as:
Dongfei Lu, Guoqiang Xi, Hangren Li, Jie Tu, Xiuqiao Liu, Xudong Liu, Jianjun Tian,  and Linxing Zhang, Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy, Int. J. Miner. Metall. Mater., 31(2024), No. 10, pp. 2263-2273. https://doi.org/10.1007/s12613-024-2915-7
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研究论文

熵增策略实现铁酸铋基薄膜的铁电性增强及漏电改善

  • 北京科技大学新材料技术研究院, 北京 100083, 中国



  • 通讯作者:

    张林兴    E-mail: linxingzhang@ustb.edu.cn

文章亮点

  • (1) 系统地研究了B位Co、Cu、Mn及A位Sm、Eu、La取代对BFO铁电薄膜的影响
  • (2) 开发Sm、La、Co、Cu元素共取代的BFO薄膜并研究其铁电性增强和漏电降低的原因
  • (3) 总结并提出了熵增策略可以进一步改善铁电薄膜的综合性能
  • BiFeO3（BFO）作为无铅铁电薄膜因其理论剩余极化大而受到广泛关注。然而，由于BFO的漏电流很大，导致其铁电性能较差。本文采用溶胶-凝胶法在氟掺杂锡氧化物衬底上沉积了一系列BFO基薄膜，研究了Co、Cu、Mn（B位）和Sm、Eu、La（A位）元素的协同取代对BFO基薄膜的晶体结构、铁电性和泄漏电流的影响。X射线衍射的结果证实晶格畸变可归因于 BFO 基薄膜中单个元素的置换。Sm和Eu的置换导致晶格畸变为伪立方结构，而La则偏向于伪四方结构。压电显微镜证实，制备的薄膜可以实现铁电畴近 180°的可逆转换。电滞回线表明，极化贡献的顺序如下：Cu > Co > Mn（B位），Sm > La > Eu（A位）。电流密度电压曲线表明，泄漏贡献的顺序如下：Mn < Cu < Co（B位），La < Eu < Sm（A位）。扫描电子显微镜显示，Cu元素的引入促进了致密晶粒的形成，而晶粒尺寸分布统计证明，La元素促进了晶粒尺寸的减小，从而导致晶界的增加和泄漏的减少。最后，通过Sm、La、Co和Cu元素的协同作用，制备出的Bi0.985Sm0.045La0.03Fe0.96Co0.02Cu0.02O3（SmLa-CoCu）薄膜，其剩余极化从25.5 µC/cm2（Bi0.985Sm0.075FO3）跃升至98.8 µC/cm2（SmLa-CoCu）。在 150 kV/cm 的电场强度下，泄漏电流也从 160 mA/cm2 大幅降至 8.4 mA/cm2。因此，本文基于化学工程的增熵策略，重点研究增强铁电性和降低漏电流，为铁电器件的发展提供了一条前景广阔的道路。
    • Research Article

    Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy

    + Author Affiliations
      Abstract
    • BiFeO3 (BFO) has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polarization. However, BFO suffers from a large leakage current, resulting in poor ferroelectric properties. Herein, the sol–gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates, and the effects of the substitution of the elements Co, Cu, Mn (B-site) and Sm, Eu, La (A-site) on the crystal structure, ferroelectricity, and leakage current of the BFO-based thin films were investigated. Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films. Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure, while La is biased toward pseudo-tetragonal. Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180° can be realized through the prepared films. The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows: Cu > Co > Mn (B-site), Sm > La > Eu (A-site). The current density voltage curves indicated that the order for leakage contribution is as follows: Mn < Cu < Co (B-site), La < Eu < Sm (A-site). Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains, and the grain size distribution statistics proved that La element promotes the reduction of grain size, leading to the increase of grain boundaries and the reduction of leakage. Finally, a Bi0.985Sm0.045La0.03Fe0.96Co0.02Cu0.02O3 (SmLa-CoCu) thin film with a qualitative leap in the remnant polarization from 25.5 (Bi0.985Sm0.075FeO3) to 98.8 µC/cm2 (SmLa-CoCu) was prepared through the synergistic action of Sm, La, Co, and Cu elements. The leakage current is also drastically reduced from 160 to 8.4 mA/cm2 at a field strength of 150 kV/cm. Thus, based on the increasing entropy strategy of chemical engineering, this study focuses on enhancing ferroelectricity and decreasing leakage current, providing a promising path for the advancement of ferroelectric devices.
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