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Volume 31 Issue 10
Oct.  2024
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文章导航 >  矿物冶金与材料学报（英文）  > 2024  >  31(10): 2263-2273
Dongfei Lu, Guoqiang Xi, Hangren Li, Jie Tu, Xiuqiao Liu, Xudong Liu, Jianjun Tian,  and Linxing Zhang, Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy, Int. J. Miner. Metall. Mater., 31(2024), No. 10, pp. 2263-2273. https://doi.org/10.1007/s12613-024-2915-7
Cite this article as:
Dongfei Lu, Guoqiang Xi, Hangren Li, Jie Tu, Xiuqiao Liu, Xudong Liu, Jianjun Tian,  and Linxing Zhang, Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy, Int. J. Miner. Metall. Mater., 31(2024), No. 10, pp. 2263-2273. https://doi.org/10.1007/s12613-024-2915-7
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研究论文

熵增策略实现铁酸铋基薄膜的铁电性增强及漏电改善

  • 北京科技大学新材料技术研究院, 北京 100083, 中国



  • 通讯作者:

    张林兴    E-mail: linxingzhang@ustb.edu.cn

文章亮点

  • (1) 系统地研究了B位Co、Cu、Mn及A位Sm、Eu、La取代对BFO铁电薄膜的影响
  • (2) 开发Sm、La、Co、Cu元素共取代的BFO薄膜并研究其铁电性增强和漏电降低的原因
  • (3) 总结并提出了熵增策略可以进一步改善铁电薄膜的综合性能
  • BiFeO3（BFO）作为无铅铁电薄膜因其理论剩余极化大而受到广泛关注。然而，由于BFO的漏电流很大，导致其铁电性能较差。本文采用溶胶-凝胶法在氟掺杂锡氧化物衬底上沉积了一系列BFO基薄膜，研究了Co、Cu、Mn（B位）和Sm、Eu、La（A位）元素的协同取代对BFO基薄膜的晶体结构、铁电性和泄漏电流的影响。X射线衍射的结果证实晶格畸变可归因于 BFO 基薄膜中单个元素的置换。Sm和Eu的置换导致晶格畸变为伪立方结构，而La则偏向于伪四方结构。压电显微镜证实，制备的薄膜可以实现铁电畴近 180°的可逆转换。电滞回线表明，极化贡献的顺序如下：Cu > Co > Mn（B位），Sm > La > Eu（A位）。电流密度电压曲线表明，泄漏贡献的顺序如下：Mn < Cu < Co（B位），La < Eu < Sm（A位）。扫描电子显微镜显示，Cu元素的引入促进了致密晶粒的形成，而晶粒尺寸分布统计证明，La元素促进了晶粒尺寸的减小，从而导致晶界的增加和泄漏的减少。最后，通过Sm、La、Co和Cu元素的协同作用，制备出的Bi0.985Sm0.045La0.03Fe0.96Co0.02Cu0.02O3（SmLa-CoCu）薄膜，其剩余极化从25.5 µC/cm2（Bi0.985Sm0.075FO3）跃升至98.8 µC/cm2（SmLa-CoCu）。在 150 kV/cm 的电场强度下，泄漏电流也从 160 mA/cm2 大幅降至 8.4 mA/cm2。因此，本文基于化学工程的增熵策略，重点研究增强铁电性和降低漏电流，为铁电器件的发展提供了一条前景广阔的道路。
    • Research Article

    Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy

    + Author Affiliations
      Abstract
    • BiFeO3 (BFO) has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polarization. However, BFO suffers from a large leakage current, resulting in poor ferroelectric properties. Herein, the sol–gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates, and the effects of the substitution of the elements Co, Cu, Mn (B-site) and Sm, Eu, La (A-site) on the crystal structure, ferroelectricity, and leakage current of the BFO-based thin films were investigated. Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films. Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure, while La is biased toward pseudo-tetragonal. Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180° can be realized through the prepared films. The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows: Cu > Co > Mn (B-site), Sm > La > Eu (A-site). The current density voltage curves indicated that the order for leakage contribution is as follows: Mn < Cu < Co (B-site), La < Eu < Sm (A-site). Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains, and the grain size distribution statistics proved that La element promotes the reduction of grain size, leading to the increase of grain boundaries and the reduction of leakage. Finally, a Bi0.985Sm0.045La0.03Fe0.96Co0.02Cu0.02O3 (SmLa-CoCu) thin film with a qualitative leap in the remnant polarization from 25.5 (Bi0.985Sm0.075FeO3) to 98.8 µC/cm2 (SmLa-CoCu) was prepared through the synergistic action of Sm, La, Co, and Cu elements. The leakage current is also drastically reduced from 160 to 8.4 mA/cm2 at a field strength of 150 kV/cm. Thus, based on the increasing entropy strategy of chemical engineering, this study focuses on enhancing ferroelectricity and decreasing leakage current, providing a promising path for the advancement of ferroelectric devices.
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    • [1]
      R. Schmitt, M. Kubicek, E. Sediva, et al., Accelerated ionic motion in amorphous memristor oxides for nonvolatile memories and neuromorphic computing, Adv. Funct. Mater., 29(2019), No. 5, art. No. 1804782. doi: 10.1002/adfm.201804782
      [2]
      R.D. Zhao, N. Ma, K. Song, and Y. Yang, Boosting photocurrent via heating BiFeO3 materials for enhanced self-powered UV photodetectors, Adv. Funct. Mater., 30(2020), No. 6, art. No. 1906232. doi: 10.1002/adfm.201906232
      [3]
      L.Y. Wu, Y. Ji, B.S. Ouyang, Z.K. Li, and Y. Yang, Self-powered light-temperature dual-parameter sensor using Nb-doped SrTiO3 materials via thermo-phototronic effect, Adv. Funct. Mater., 31(2021), No. 17, art. No. 2010439. doi: 10.1002/adfm.202010439
      [4]
      L.X. Zhang, J. Chen, L.L. Fan, et al., Giant polarization in super-tetragonal thin films through interphase strain, Science, 361(2018), No. 6401, p. 494. doi: 10.1126/science.aan2433
      [5]
      L.X. Zhang, D.R. Sun, M.S. Chai, et al., Ultrafast photoinduced strain in super-tetragonal PbTiO3 ferroelectric films, Sci. China Mater., 64(2021), No. 7, p. 1679. doi: 10.1007/s40843-020-1565-8
      [6]
      N. Izyumskaya, Y.I. Alivov, S.J. Cho, H. Morkoç, H. Lee, and Y.S. Kang, Processing, structure, properties, and applications of PZT thin films, Crit. Rev. Solid State Mater. Sci., 32(2007), No. 3-4, p. 111. doi: 10.1080/10408430701707347
      [7]
      A.Q. Jiang, W.P. Geng, P. Lv, et al., Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers, Nat. Mater., 19(2020), No. 11, p. 1188. doi: 10.1038/s41563-020-0702-z
      [8]
      K.J. Choi, M. Biegalski, Y.L. Li, et al., Enhancement of ferroelectricity in strained BaTiO3 thin films, Science, 306(2004), No. 5698, p. 1005. doi: 10.1126/science.1103218
      [9]
      J. Wang, J.B. Neaton, H. Zheng, et al., Epitaxial BiFeO3 multiferroic thin film heterostructures, Science, 299(2003), No. 5613, p. 1719. doi: 10.1126/science.1080615
      [10]
      T. Choi, S. Lee, Y.J. Choi, V. Kiryukhin, and S.W. Cheong, Switchable ferroelectric diode and photovoltaic effect in BiFeO3, Science, 324(2009), No. 5923, p. 63. doi: 10.1126/science.1168636
      [11]
      R.J. Zeches, M.D. Rossell, J.X. Zhang, et al., A strain-driven morphotropic phase boundary in BiFeO3, Science, 326(2009), No. 5955, p. 977. doi: 10.1126/science.1177046
      [12]
      I.T. Bae, Z.R. Lingley, B.J. Foran, P.M. Adams, and H. Paik, Large bi-axial tensile strain effect in epitaxial BiFeO3 film grown on single crystal PrScO3, Sci. Rep., 13(2023), No. 1, art. No. 19018. doi: 10.1038/s41598-023-45980-w
      [13]
      Z.R. Liu, H. Wang, M. Li, et al., In-plane charged domain walls with memristive behaviour in a ferroelectric film, Nature, 613(2023), No. 7945, p. 656. doi: 10.1038/s41586-022-05503-5
      [14]
      Y.M. Kim, A. Morozovska, E. Eliseev, et al., Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/La xSr1− xMnO3 interface, Nat. Mater., 13(2014), No. 11, p. 1019. doi: 10.1038/nmat4058
      [15]
      D. Sando, A. Agbelele, D. Rahmedov, et al., Crafting the magnonic and spintronic response of BiFeO3 films by epitaxial strain, Nat. Mater., 12(2013), No. 7, p. 641. doi: 10.1038/nmat3629
      [16]
      V. Železný, D. Chvostová, L. Pajasová, I. Vrejoiu, and M. Alexe, Optical properties of epitaxial BiFeO3 thin films, Appl. Phys. A, 100(2010), No. 4, p. 1217. doi: 10.1007/s00339-010-5881-z
      [17]
      J.B. Neaton, C. Ederer, U.V. Waghmare, N.A. Spaldin, and K.M. Rabe, First-principles study of spontaneous polarization in multiferroic BiFeO3, Phys. Rev. B, 71(2005), No. 1, art. No. 014113. doi: 10.1103/PhysRevB.71.014113
      [18]
      H.F. Zhu, M.L. Liu, Y.X. Zhang, Z.H. Yu, J. Ouyang, and W. Pan, Increasing energy storage capabilities of space-charge dominated ferroelectric thin films using interlayer coupling, Acta Mater., 122(2017), p. 252. doi: 10.1016/j.actamat.2016.09.051
      [19]
      J.G. Wu, J. Wang, D.Q. Xiao, and J.G. Zhu, Mn4+:BiFeO3/Zn2+:BiFeO3 bilayered thin films of (111) orientation, Appl. Surf. Sci., 257(2011), No. 16, p. 7226. doi: 10.1016/j.apsusc.2011.03.095
      [20]
      T. Yoshimura, S. Murakami, K. Wakazono, K. Kariya, and N. Fujimura, Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films, Appl. Phys. Express, 6(2013), No. 5, art. No. 051501. doi: 10.7567/APEX.6.051501
      [21]
      P. Machado, M. Scigaj, J. Gazquez, et al., Band gap tuning of solution-processed ferroelectric perovskite BiFe1– xCo xO3 thin films, Chem. Mater., 31(2019), No. 3, p. 947. doi: 10.1021/acs.chemmater.8b04380
      [22]
      N.T. Tho, T. Kanashima, and M. Okuyama, Leakage Current reduction and ferroelectric property of BiFe1− xCo xO3 thin films prepared by chemical solution deposition using iterative rapid thermal annealing at approximately 520°C, Jpn. J. Appl. Phys., 49(2010), No. 9R, art. No. 095803. doi: 10.1143/JJAP.49.095803
      [23]
      C.M. Raghavan, J.W. Kim, and S.S. Kim, Structural and ferroelectric properties of chemical solution deposited (Nd, Cu) co-doped BiFeO3 thin film, Ceram. Int., 39(2013), No. 4, p. 3563. doi: 10.1016/j.ceramint.2012.10.182
      [24]
      S.W. Sukarsa, B. Soegiyono, and S. Budiawanti, The effect of zinc doped bismuth ferrite on changes in structural and microwave absorption properties through the sol–gel synthesis method, Int. J. Integr. Eng., 14(2022), No. 2, p. 73. doi: 10.30880/ijie.2022.14.02.011
      [25]
      B.L. Guo, H.M. Deng, X.Z. Zhai, et al., Cr doping-induced structural phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films, Mater. Lett., 186(2017), p. 198. doi: 10.1016/j.matlet.2016.09.094
      [26]
      T.A. Anjum, M. Naveed-Ul-Haq, S. Hussain, and M. Rafique, Analyses of structure, electronic and multiferroic properties of Bi1− xNd xFeO3 (x = 0, 0.05, 0.10, 0.15, 0.20, 0.25) system, J. Alloys Compd., 820(2020), art. No. 153095. doi: 10.1016/j.jallcom.2019.153095
      [27]
      H. Uchida, R. Ueno, H. Funakubo, and S. Koda, Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films, J. Appl. Phys., 100(2006), No. 1, p. 014106. doi: 10.1063/1.2210167
      [28]
      H. Wang, J.J. Huang, X. Sun, J. Jian, J.C. Liu, and H.Y. Wang, Effective doping control in Sm-doped BiFeO3 thin films via deposition temperature, RSC Adv., 10(2020), No. 66, p. 40229. doi: 10.1039/D0RA06775J
      [29]
      A.D. Sharma and H.B. Sharma, Influence of Gd doping and thickness variation on structural, morphological and optical properties of nanocrystalline bismuth ferrite thin films via sol–gel technology, J. Mater. Sci. Mater. Electron., 32(2021), No. 15, p. 20612. doi: 10.1007/s10854-021-06571-5
      [30]
      D.S. Feng, B.H. Huang, L.L. Li, et al., The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films, J. Mater. Sci. Technol., 106(2022), p. 49. doi: 10.1016/j.jmst.2021.07.025
      [31]
      S. Yang, G.B. Ma, L. Xu, C.Y. Deng, and X. Wang, Improved ferroelectric properties and band-gap tuning in BiFeO3 films via substitution of Mn, RSC Adv., 9(2019), No. 50, p. 29238. doi: 10.1039/C9RA05914H
      [32]
      G.Q. Xi, J.Q. Ding, R.Q. Guo, J.J. Tian, and L.X. Zhang, Enhanced switchable ferroelectric photovoltaic in BiFeO3 based films through chemical-strain-tuned polarization, Ceram. Int., 48(2022), No. 11, p. 15414. doi: 10.1016/j.ceramint.2022.02.075
      [33]
      X.R. Cheng, G.Q. Xi, Y.W. Fang, J.J. Tian, and L.X. Zhang, Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films, J. Eur. Ceram. Soc, 43(2022), No. 8, . 3275. doi: 10.1016/j.jeurceramsoc.2023.02.025
      [34]
      Y.Y. Huo, Z.Y. Wang, Y.L. Zhang, and Y.Z. Wang, High-entropy ferrite with tunable magnetic properties for excellent microwave absorption, Int. J. Miner. Metall. Mater., 2024. DOI: 10.1007/s12613-024-2883-y
      [35]
      Y. Yang, T.Y. Chen, L.Z. Tan, et al., Bifunctional nanoprecipitates strengthen and ductilize a medium-entropy alloy, Nature, 595(2021), p. 245. doi: 10.1038/s41586-021-03607-y
      [36]
      C.D. Dai, Y. Fu, J.X. Guo, and C.W. Du, Effects of substrate temperature and deposition time on the morphology and corrosion resistance of FeCoCrNiMo0.3 high-entropy alloy coating fabricated by magnetron sputtering, Int. J. Miner. Metall. Mater., 27(2020), No. 10, p. 1388. doi: 10.1007/s12613-020-2149-2
      [37]
      Z.B. Chen, K. Huang, B.W. Zhang, et al., Corrosion engineering on AlCoCrFeNi high-entropy alloys toward highly efficient electrocatalysts for the oxygen evolution of alkaline seawater, Int. J. Miner. Metall. Mater., 30(2023), No. 10, p. 1922. doi: 10.1007/s12613-023-2624-7
      [38]
      F. Jin, Y.M. Zhu, L. Li, et al., Robust ferrimagnetism and switchable magnetic anisotropy in high-entropy ferrite film, Adv. Funct. Mater., 33(2023), No. 16, art. No. 2214273. doi: 10.1002/adfm.202214273
      [39]
      L. Chen, S.Q. Deng, H. Liu, J. Wu, H. Qi, and J. Chen, Giant energy-storage density with ultrahigh efficiency in lead-free relaxors via high-entropy design, Nat. Commun., 13(2022), No. 1, art. No. 3089. doi: 10.1038/s41467-022-30821-7
      [40]
      R. Zhang, C.Y. Wang, P.C. Zou, et al., Compositionally complex doping for zero-strain zero-cobalt layered cathodes, Nature, 610(2022), No. 7930, p. 67. doi: 10.1038/s41586-022-05115-z
      [41]
      B.B. Yang, Y. Zhang, H. Pan, et al., High-entropy enhanced capacitive energy storage, Nat. Mater., 21(2022), p. 1074. doi: 10.1038/s41563-022-01274-6
      [42]
      B.B. Yang, Q.H. Zhang, H.B. Huang, et al., Engineering relaxors by entropy for high energy storage performance, Nat. Energy, 8(2023), p. 956. doi: 10.1038/s41560-023-01300-0
      [43]
      A. Huang and S.R. Shannigrahi, Effect of bottom electrode and resistive layer on the dielectric and ferroelectric properties of sol–gel derived BiFeO3 thin films, J. Alloys Compd., 509(2011), No. 5, p. 2054. doi: 10.1016/j.jallcom.2010.10.135
      [44]
      M.S. Bernardo, T. Jardiel, M. Peiteado, et al., Intrinsic compositional inhomogeneities in bulk Ti-doped BiFeO3: Microstructure development and multiferroic properties, Chem. Mater., 25(2013), No. 9, p. 1533. doi: 10.1021/cm303743h
      [45]
      X. Xue, G.Q. Tan, H.J. Ren, and A. Xia, Structural, electric and multiferroic properties of Sm-doped BiFeO3 thin films prepared by the sol–gel process, Ceram. Int., 39(2013), No. 6, p. 6223. doi: 10.1016/j.ceramint.2013.01.042
      [46]
      X.L. Deng, Z.X. Zeng, R.L. Gao, et al., Study of structural, optical and enhanced multiferroic properties of Ni doped BFO thin films synthesized by sol–gel method, J. Alloys Compd., 831(2020), art. No. 154857. doi: 10.1016/j.jallcom.2020.154857
      [47]
      K.S. Nalwa, A. Garg, and A. Upadhyaya, Effect of samarium doping on the properties of solid-state synthesized multiferroic bismuth ferrite, Mater. Lett., 62(2008), No. 6-7, p. 878. doi: 10.1016/j.matlet.2007.07.002
      [48]
      P.P. Biswas, S. Pal, V. Subramanian, and P. Murugavel, Large photovoltaic response in rare-earth doped BiFeO3 polycrystalline thin films near morphotropic phase boundary composition, Appl. Phys. Lett., 114(2019), No. 17, art. No. 173901. doi: 10.1063/1.5090911
      [49]
      W.L. Liu, G.Q. Tan, X. Xue, G.H. Dong, H.J. Ren, and A. Xia, Phase transition and enhanced multiferroic properties of (Sm, Mn and Cr) co-doped BiFeO3 thin films, Ceram. Int., 40(2014), No. 8, p. 12179. doi: 10.1016/j.ceramint.2014.04.058
      [50]
      A.S. Priya, I.B. Shameem Banu, M. Shahid Anwar, and S. Hussain, Studies on the multiferroic properties of (Zr, Cu) co-doped BiFeO3 prepared by sol–gel method, J. Sol Gel Sci. Technol., 80(2016), No. 3, p. 579. doi: 10.1007/s10971-016-4144-7
      [51]
      J. Sharma, B.H. Bhat, A. Kumar, et al., Magnetic and dielectric properties of Ce–Co substituted BiFeO3multiferroics, Mater. Res. Express, 4(2017), No. 3, art. No. 036104. doi: 10.1088/2053-1591/aa6433
      [52]
      G.H. Dong, G.Q. Tan, Y.Y. Luo, W.L. Liu, A. Xia, and H.J. Ren, Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films, Appl. Surf. Sci., 305(2014), p. 55. doi: 10.1016/j.apsusc.2014.02.159
      [53]
      B.F. Yu, M.Y. Li, Z.Q. Hu, et al., Enhanced multiferroic properties of the high-valence Pr doped BiFeO3 thin film, Appl. Phys. Lett., 93(2008), No. 18, art. No. 182909. doi: 10.1063/1.3020296
      [54]
      X.L. Liang and J.Q. Dai, Prominent ferroelectric properties in Mn-doped BiFeO3 spin-coated thin films, J. Alloys Compd., 886(2021), art. No. 161168. doi: 10.1016/j.jallcom.2021.161168
      [55]
      N. Bassiri-Gharb, Y. Bastani, and A. Bernal, Chemical solution growth of ferroelectric oxide thin films and nanostructures, Chem. Soc. Rev., 43(2014), No. 7, p. 2125. doi: 10.1039/C3CS60250H
      [56]
      S. Gupta, M. Tomar, V. Gupta, et al., Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film, J. Appl. Phys., 115(2014), No. 23, art. No. 234105. doi: 10.1063/1.4884680
      [57]
      R. Maity, A.P. Sakhya, A. Dutta, and T.P. Sinha, Effect of Sm doping on the structural, morphological and dielectric properties of EuFeO3 ceramics, Solid State Sci., 91(2019), p. 28. doi: 10.1016/j.solidstatesciences.2019.03.007
      [58]
      S.K. Singh, K. Maruyama, and H. Ishiwara, Reduced leakage current in La and Ni codoped BiFeO3 thin films, Appl. Phys. Lett., 91(2007), No. 11, art. No. 112913. doi: 10.1063/1.2784968
      [59]
      G. Singh, H.P. Bhasker, R.P. Yadav, et al., Dielectric, magnetic and magneto-dielectric properties of (La, Co) co-doped BiFeO3, Phys. Scripta, 94(2019), No. 12, art. No. 125805. doi: 10.1088/1402-4896/ab354a
      [60]
      X.L. Liang, J.Q. Dai, C.C. Zhang, and T.F. Cao, Effects of solvents and Al doping on structure and physical properties of BiFeO3 thin films, J. Sol Gel Sci. Technol., 98(2021), No. 1, p. 45. doi: 10.1007/s10971-021-05489-y
      [61]
      J. Tu, J.Q. Ding, G.Q. Xi, et al., Controllable chemical composition in double-perovskite Bi0.5Sm0.5FeO3 epitaxial thin films for ferroelectric, photovoltaic, and ferromagnetic properties, Chem. Eng. J., 453(2023), art. No. 139726. doi: 10.1016/j.cej.2022.139726
      [62]
      C.C. Zhang, J.Q. Dai, and X.L. Liang, Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol–gel method, Ceram. Int., 47(2021), No. 12, p. 16776. doi: 10.1016/j.ceramint.2021.02.250
      [63]
      J.H. Shah, H.Y. Ye, Y. Liu, et al., Exploration of the intrinsic factors limiting the photocurrent density in ferroelectric BiFeO3 thin film, J. Mater. Chem. A, 8(2020), No. 14, p. 6863. doi: 10.1039/D0TA00955E
      [64]
      X. Ou, Y. Shuai, W.B. Luo, et al., Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts, ACS Appl. Mater. Interfaces, 5(2013), No. 23, p. 12764. doi: 10.1021/am404144c
      [65]
      Y.L. Zhang, J. Qi, Y.H. Wang, et al., Tuning magnetic properties of BiFeO3 thin films by controlling Mn doping concentration, Ceram. Int., 44(2018), No. 6, p. 6054. doi: 10.1016/j.ceramint.2017.12.230
      [66]
      L. Bai, M.J. Sun, W.J. Ma, J.H. Yang, J.K. Zhang, and Y.Q. Liu, Enhanced magnetic properties of Co-doped BiFeO3 thin films via structural progression, Nanomaterials, 10(2020), No. 9, art. No. 1798. doi: 10.3390/nano10091798
      [67]
      J.Q. Ding, R.Q. Guo, J.C. Hu, et al., Switchable ferroelectric photovoltaic in the low bandgap cobalt-substituted BiFeO3 epitaxial thin films, Appl. Surf. Sci., 606(2022), art. No. 154898. doi: 10.1016/j.apsusc.2022.154898
      [68]
      P.S.V. Mocherla, C. Karthik, R. Ubic, M.S. Ramachandra Rao, and C. Sudakar, Tunable bandgap in BiFeO3 nanoparticles: The role of microstrain and oxygen defects, Appl. Phys. Lett., 103(2013), No. 2, art. No. 022910. doi: 10.1063/1.4813539
      [69]
      Z.C. Quan, W. Liu, H. Hu, et al., Microstructure, electrical and magnetic properties of Ce-doped BiFeO3 thin films, J. Appl. Phys., 104(2008), No. 8, art. No. 084106. doi: 10.1063/1.3000478
      [70]
      J.Q. Ding, H.R. Li, G.Q. Xi, J. Tu, J.J. Tian, and L.X. Zhang, Bandgap engineering strategy through chemical strain and oxygen vacancies in super-tetragonal BiFeO3 epitaxial films, Inorg. Chem. Front., 10(2023), No. 4, p. 1215. doi: 10.1039/D2QI02343A
      [71]
      L.H. Jin, X.W. Tang, R.H. Wei, et al., BiFeO3(00l)/LaNiO3/Si thin films with enhanced polarization: An all-solution approach, RSC Adv., 6(2016), No. 82, p. 78629. doi: 10.1039/C6RA16388B
      [72]
      Y.H. Qiu, Y.P. Huang, Y.L. Wang, X. Liu, and D. Huang, Facile synthesis of Cu-doped manganese oxide octahedral molecular sieve for efficient degradation of sulfamethoxazole via peroxymonosulfate activation, Int. J. Miner. Metall. Mater., 2024. DOI: 10.1007/s12613-024-2858-z
      [73]
      G.D. Hu, S.H. Fan, C.H. Yang, and W.B. Wu, Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film, Appl. Phys. Lett., 92(2008), No. 19, art. No. 192905. doi: 10.1063/1.2918130
      [74]
      F. Yan, T.J. Zhu, M.O. Lai, and L. Lu, Enhanced multiferroic properties and domain structure of La-doped BiFeO3 thin films, Scripta Mater., 63(2010), No. 7, p. 780. doi: 10.1016/j.scriptamat.2010.06.013
      [75]
      H. Matsuo, Y. Kitanaka, Y. Noguchi, and M. Miyayama, Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping, J. Asian Ceram. Soc., 3(2015), No. 4, p. 426. doi: 10.1016/j.jascer.2015.10.001
      [76]
      Z.B. Ma, H.Y. Liu, L.X. Wang, F.Q. Zhang, L.Y. Zhu, and S.H. Fan, Phase transition and multiferroic properties of Zr-doped BiFeO3 thin films, J. Mater. Chem. C, 8(2020), No. 48, p. 17307. doi: 10.1039/D0TC04593D
      [77]
      P. Bhupaijit, C. Kaewsai, T. Suriwong, et al., Effect of Co2+ substitution in B-sites of the perovskite system on the phase formation, microstructure, electrical and magnetic properties of Bi0.5(Na0.68K0.22Li0.10)0.5TiO3 ceramics, Int. J. Miner. Metall. Mater., 29(2022), No. 9, p. 1798. doi: 10.1007/s12613-021-2345-8
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