β-氧化镓单晶及其器件热处理的研究进展

严宇超; 金竹; 张辉; 杨德仁

doi:10.1007/s12613-024-2926-4

Volume 31 Issue 7

Jul. 2024

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文章导航 > 矿物冶金与材料学报（英文） > 2024 > 31(7): 1659-1677

Yuchao Yan, Zhu Jin, Hui Zhang, and Deren Yang, Recent progresses in thermal treatment of β-Ga₂O₃ single crystals and devices, Int. J. Miner. Metall. Mater., 31(2024), No. 7, pp. 1659-1677. https://doi.org/10.1007/s12613-024-2926-4

Cite this article as:

Yuchao Yan, Zhu Jin, Hui Zhang, and Deren Yang, Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices, Int. J. Miner. Metall. Mater., 31(2024), No. 7, pp. 1659-1677. https://doi.org/10.1007/s12613-024-2926-4

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特约综述

β-氧化镓单晶及其器件热处理的研究进展

1)
浙江大学材料科学与工程学院, 硅及先进半导体材料国家重点实验室, 杭州 310027, 中国
2)
浙江大学杭州国际科创中心, 浙江省功率半导体材料与器件重点实验室, 杭州 311200, 中国

通讯作者:
金竹 E-mail: msezhanghui@zju.edu.cn

张辉 E-mail: jinzhuu@zju.edu.cn

文章亮点

(1) 系统地总结了热处理技术在β-氧化镓单晶及衬底性质调控方面的研究进展。

(2) 系统地总结了热处理技术在β-氧化镓器件制备方面的应用及其研究进展。

(3) 总结并提出了应用于β-氧化镓单晶及器件的热处理工艺发展方向。

中文摘要

近年来，超宽带隙半导体β-氧化镓凭借其有意的物理性质而被认为在功率器件和紫外光电器件方面具有极大的应用潜力。在半导体工业中，热处理作为一种方便有效的单晶衬底性质调制和器件制造方法，已得到了广泛应用。因此，全面总结β-氧化镓单晶和器件在高温热处理过程中的行为对促进氧化镓产业的发展具有重要意义。在这篇综述中，我们介绍了通过热处理调节β-氧化镓单晶衬底性能的研究进展，主要包括三个应用方面:(i) 调整晶体电学性能，(ii) 修饰衬底表面形貌，(iii) 氧化法制备β-氧化镓。同时，本文综述了热处理在β-氧化镓(i)电极制备和(ii) 辐射损伤处理和离子注入等器件制备方面的应用。在不同的应用中，本文总结了较为通用的热处理策略，并提出了现存热处理工艺存在的问题。

关键词:

Invited Review

Recent progresses in thermal treatment of β-Ga₂O₃ single crystals and devices

+ Author Affiliations

Abstract

Abstract

In recent years, ultra-wide bandgap β-Ga₂O₃ has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric devices. In semiconductor industrial, thermal treatment has been widely utilized as a convenient and effective approach for substrate property modulation and device fabrication. Thus, a thorough summary of β-Ga₂O₃ substrates and devices behaviors after high-temperature treatment should be significant. In this review, we present the recent advances in modulating properties of β-Ga₂O₃ substrates by thermal treatment, which include three major applications: (i) tuning surface electrical properties, (ii) modifying surface morphology, and (iii) oxidating films. Meanwhile, regulating electrical contacts and handling with radiation damage and ion implantation have also been discussed in device fabrication. In each category, universal annealing conditions were speculated to figure out the corresponding problems, and some unsolved questions were proposed clearly. This review could construct a systematic thermal treatment strategy for various purposes and applications of β-Ga₂O₃.
- β-gallium oxide;
- thermal treatment;
- substrates;
- devices

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