Interface structure between epitaxial NiSi<sub>2</sub> and Si

Wei-Long Liu; Wen-Jauh Chen; Ting-Kan Tsai; Hsun-Heng Tsai; Shu-Huei Hsieh

doi:10.1016/S1005-8850(06)60113-8

Volume 13 Issue 6

Dec. 2006

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文章导航 > 矿物冶金与材料学报（英文） > 2006 > 13(6): 558-563

Wei-Long Liu, Wen-Jauh Chen, Ting-Kan Tsai, Hsun-Heng Tsai, and Shu-Huei Hsieh, Interface structure between epitaxial NiSi₂ and Si, J. Univ. Sci. Technol. Beijing, 13(2006), No. 6, pp. 558-563. https://doi.org/10.1016/S1005-8850(06)60113-8

Cite this article as:

Wei-Long Liu, Wen-Jauh Chen, Ting-Kan Tsai, Hsun-Heng Tsai, and Shu-Huei Hsieh, Interface structure between epitaxial NiSi2 and Si, J. Univ. Sci. Technol. Beijing, 13(2006), No. 6, pp. 558-563. https://doi.org/10.1016/S1005-8850(06)60113-8

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Materials

Interface structure between epitaxial NiSi₂ and Si

Department of Materials Engineering, Formosa University, Yunlin, China Taipei
Graduate Institute of Materials Engineering, Pingtung University of Science and Technology 1, Pingtung, China Taipei
Department of Biosystems Engineering, Pingtung University of Science and Technology 1, Pingtung, China Taipei

通讯作者:
Wen-Jauh Chen E-mail: tienmc@mail.npust.edu.tw

中文摘要

The interface structure between the Si and NiSi₂ epitaxially grown on the (112) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi₂ epitaxially grown on the (112) Si substrate has six different types:type A NiSi₂ (111)/(111) Si, type A NiSi₂ (001)/(001) Si, type B NiSi₂ (111)/(111) Si, type B NiSi₂ (112)/(112) Si, type B NiSi₂ (221)/(001) Si, and type B NiSi₂ (114)/(110) Si. And there are one or more different atomic structures for one type of interface.

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Materials

Interface structure between epitaxial NiSi₂ and Si

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Abstract

Abstract

The interface structure between the Si and NiSi₂ epitaxially grown on the (112) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi₂ epitaxially grown on the (112) Si substrate has six different types:type A NiSi₂ (111)/(111) Si, type A NiSi₂ (001)/(001) Si, type B NiSi₂ (111)/(111) Si, type B NiSi₂ (112)/(112) Si, type B NiSi₂ (221)/(001) Si, and type B NiSi₂ (114)/(110) Si. And there are one or more different atomic structures for one type of interface.
- nickel silicide;
- interface;
- high resolution;
- image simulation;
- atomic structure