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Volume 14 Issue 3
Jun.  2007
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Hongyu Liu, Xueming Ma, Dongmei Jiang,  and Wangzhou Shi, Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling, J. Univ. Sci. Technol. Beijing, 14(2007), No. 3, pp. 266-270. https://doi.org/10.1016/S1005-8850(07)60051-6
Cite this article as:
Hongyu Liu, Xueming Ma, Dongmei Jiang,  and Wangzhou Shi, Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling, J. Univ. Sci. Technol. Beijing, 14(2007), No. 3, pp. 266-270. https://doi.org/10.1016/S1005-8850(07)60051-6
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Materials

Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

  • 通讯作者:

    Hongyu Liu    E-mail: ecnuliuhongyu@yahoo.com.cn

  • Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling (HEBM) and low-temperature sintering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor concentration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.
  • Materials

    Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

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