Yaohui Wang, Xu Zhang, Xianying Wu, Huixing Zhang, and Xiaoji Zhang, Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique, J. Univ. Sci. Technol. Beijing, 15(2008), No. 5, pp. 622-626. https://doi.org/10.1016/S1005-8850(08)60116-4
Cite this article as:
Yaohui Wang, Xu Zhang, Xianying Wu, Huixing Zhang, and Xiaoji Zhang, Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique, J. Univ. Sci. Technol. Beijing, 15(2008), No. 5, pp. 622-626. https://doi.org/10.1016/S1005-8850(08)60116-4
Yaohui Wang, Xu Zhang, Xianying Wu, Huixing Zhang, and Xiaoji Zhang, Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique, J. Univ. Sci. Technol. Beijing, 15(2008), No. 5, pp. 622-626. https://doi.org/10.1016/S1005-8850(08)60116-4
Citation:
Yaohui Wang, Xu Zhang, Xianying Wu, Huixing Zhang, and Xiaoji Zhang, Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique, J. Univ. Sci. Technol. Beijing, 15(2008), No. 5, pp. 622-626. https://doi.org/10.1016/S1005-8850(08)60116-4
Key Laboratory of the Ministry of Education of China for Beam Technology and Material Modification, Institution of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center, Beijing 100875, China
Direct current metal filtered cathodic vacuum arc (FCVA) and acetylene gas (C2H2) were wielded to synthesize Ti-containing amorphous carbon films on Si (100). The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the (111) preferential crystallographic orientation exists in the film,and the main existing pattern of carbon is sp2. With increasing the acetylene flow rate,the contents of Ti and TiC phase of the film gradually reduce; however,the thickness of the film increases. When the substrate bias voltage reaches -600 V,the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa,respectively,and the friction coefficient of the film is 0.25.
Key Laboratory of the Ministry of Education of China for Beam Technology and Material Modification, Institution of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center, Beijing 100875, China
Direct current metal filtered cathodic vacuum arc (FCVA) and acetylene gas (C2H2) were wielded to synthesize Ti-containing amorphous carbon films on Si (100). The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the (111) preferential crystallographic orientation exists in the film,and the main existing pattern of carbon is sp2. With increasing the acetylene flow rate,the contents of Ti and TiC phase of the film gradually reduce; however,the thickness of the film increases. When the substrate bias voltage reaches -600 V,the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa,respectively,and the friction coefficient of the film is 0.25.
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