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Volume 3 Issue 1
Mar.  1996
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WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu,  and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
Cite this article as:
WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu,  and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
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直流负偏压对金刚石形核的影响

  • 本文研究了微波等离子体化学气相沉积金刚石薄膜中,直流负偏压的大小、施加的时间和施加偏压期间的甲烷浓度对光滑Si衬底上金刚石形核的影响.发现适当的衬底负偏压可以极大地促进金刚石的形核,而过高或过低的偏压则都不利于形核。
  • EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM

    + Author Affiliations
    • Effect of direct current negative bias on diamond nucleation in microwave plasma assisted chemical vapor deposition system was discussed. The influence of the magnitude of negative bias value,bias duration and methane concentration in the gas mixture on nucleation density of diamond films was studied respectively. It is demonstrated that direct current negative bias can drastically enhance the diamond nucleation at a suitable value.Long bias duration and high methane concentration are helpful for diamond nucleation.
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