Peng Feng, Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 69-72.
Cite this article as:
Peng Feng, Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 69-72.
Peng Feng, Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 69-72.
Citation:
Peng Feng, Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 69-72.
The laser-field induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field was discussed, it is shown that when the laser frequency is near to the electron cyclotron frequency, no matter how weaker the laser field is, the magnon amplification always occurs. In case of fixed laser frequency, the optical absorption of magnons obeys the definite selection rule to the laser field strength. The rate of change of magnon occupation is calculated, and the amplification condition is given.
The laser-field induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field was discussed, it is shown that when the laser frequency is near to the electron cyclotron frequency, no matter how weaker the laser field is, the magnon amplification always occurs. In case of fixed laser frequency, the optical absorption of magnons obeys the definite selection rule to the laser field strength. The rate of change of magnon occupation is calculated, and the amplification condition is given.