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Volume 10 Issue 5
Oct.  2003
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Fengwu Zhu, Zhonghai Thai, and Guanghua Yu, Interface reactions in film materials, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 1-8.
Cite this article as:
Fengwu Zhu, Zhonghai Thai, and Guanghua Yu, Interface reactions in film materials, J. Univ. Sci. Technol. Beijing, 10(2003), No. 5, pp. 1-8.
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Review

Interface reactions in film materials

  • 通讯作者:

    Fengwu Zhu    E-mail: fwzhu@public.fhnet.cn.net

  • Interface reaction (IR) is a frequently observed phenomenon in the study of advanced thin film materials. It is very important to study the reaction conditions at which IR happens and then to suppress or make use of it, the necessary conditions, including both thermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems, including oxide/silicon,oxide/metal, metal/metal, metal/semiconductor and semiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were also introduced.
  • Review

    Interface reactions in film materials

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