Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, and Xiufang Zhang, Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing, 7(2000), No. 4, pp. 282-285.
Cite this article as:
Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, and Xiufang Zhang, Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing, 7(2000), No. 4, pp. 282-285.
Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, and Xiufang Zhang, Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing, 7(2000), No. 4, pp. 282-285.
Citation:
Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, and Xiufang Zhang, Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing, 7(2000), No. 4, pp. 282-285.
Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China
Beijing Laboratory of Vacuum Physics, Institute of physics, Chines Academy of Sciences, Beijing 100080, China
中文摘要
Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1.20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.
Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1.20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.
下载: