Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, Shengxin Liu, and Jingyuan Li, Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model, J. Univ. Sci. Technol. Beijing, 9(2002), No. 5, pp. 367-371.
Cite this article as:
Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, Shengxin Liu, and Jingyuan Li, Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model, J. Univ. Sci. Technol. Beijing, 9(2002), No. 5, pp. 367-371.
Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, Shengxin Liu, and Jingyuan Li, Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model, J. Univ. Sci. Technol. Beijing, 9(2002), No. 5, pp. 367-371.
Citation:
Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, Shengxin Liu, and Jingyuan Li, Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model, J. Univ. Sci. Technol. Beijing, 9(2002), No. 5, pp. 367-371.
Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model
The growth of {100} oriented CVD(Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.
Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model
The growth of {100} oriented CVD(Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.
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