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Volume 12 Issue 5
Oct.  2005
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Zhangjian Zhouand Changchun Ge, Fabrication of metal/metal functionally graded materials with a high melting point difference, J. Univ. Sci. Technol. Beijing, 12(2005), No. 5, pp. 427-430.
Cite this article as:
Zhangjian Zhouand Changchun Ge, Fabrication of metal/metal functionally graded materials with a high melting point difference, J. Univ. Sci. Technol. Beijing, 12(2005), No. 5, pp. 427-430.
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Materials

Fabrication of metal/metal functionally graded materials with a high melting point difference

  • 通讯作者:

    Zhangjian Zhou    E-mail: zhouzhj@mater.ustb.edu.cn

  • Three kinds of full compositional distribution (from 0 to 100wt%W) W/Cu FGMs (functionally graded materials) with high density is fabricated by resistance sintering under ultra-high pressure. Microstructure analysis showed that the good grading composition of all FGMs has been obtained. The sintering mechanism of W is mainly solid state sintering. Thermal shock test in air demonstrated that the grading at the interface between W and Cu is effective for the reduction of thermal stress, but obvious transverse and vertical cracks occur in the pure W layer. The oxidation of the W60Cu40 layer and the W40Cu60 layer is heavier than that of the other layers.
  • Materials

    Fabrication of metal/metal functionally graded materials with a high melting point difference

    + Author Affiliations
    • Three kinds of full compositional distribution (from 0 to 100wt%W) W/Cu FGMs (functionally graded materials) with high density is fabricated by resistance sintering under ultra-high pressure. Microstructure analysis showed that the good grading composition of all FGMs has been obtained. The sintering mechanism of W is mainly solid state sintering. Thermal shock test in air demonstrated that the grading at the interface between W and Cu is effective for the reduction of thermal stress, but obvious transverse and vertical cracks occur in the pure W layer. The oxidation of the W60Cu40 layer and the W40Cu60 layer is heavier than that of the other layers.
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