Hong Qiu, Yue Tian, and Mituru Hashimoto, Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001), J. Univ. Sci. Technol. Beijing, 8(2001), No. 3, pp. 207-209.
Cite this article as:
Hong Qiu, Yue Tian, and Mituru Hashimoto, Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001), J. Univ. Sci. Technol. Beijing, 8(2001), No. 3, pp. 207-209.
Hong Qiu, Yue Tian, and Mituru Hashimoto, Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001), J. Univ. Sci. Technol. Beijing, 8(2001), No. 3, pp. 207-209.
Citation:
Hong Qiu, Yue Tian, and Mituru Hashimoto, Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001), J. Univ. Sci. Technol. Beijing, 8(2001), No. 3, pp. 207-209.
Applied Science School, University of Science and Technology Beijing, Beijing 100083, China
Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, 30 Xueyuanlu, Haidian District, Beijing 100083, China
Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 183-8585, Japan
中文摘要
Cu films of 30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kV and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of -135℃ to 0 ℃. The Cu film is polycrystalline at Vs= 0 V while it epitaxially grows with Cu(00) || MgO(001) and Cu[0 10] || MgO[010] at Vs=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.
Cu films of 30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kV and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of -135℃ to 0 ℃. The Cu film is polycrystalline at Vs= 0 V while it epitaxially grows with Cu(00) || MgO(001) and Cu[0 10] || MgO[010] at Vs=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.
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