Wu-jun Qiu, Sheng-nan Zhang, Tie-jun Zhu,  and Xin-bing Zhao, Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 489-493. https://doi.org/10.1007/s12613-010-0346-0
Cite this article as:
Wu-jun Qiu, Sheng-nan Zhang, Tie-jun Zhu,  and Xin-bing Zhao, Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp. 489-493. https://doi.org/10.1007/s12613-010-0346-0

Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

+ Author Affiliations
  • Corresponding author:

    Xin-bing Zhao    E-mail: zhaoxb@zju.edu.cn

  • Received: 8 August 2009Revised: 15 August 2009Accepted: 20 August 2009
  • A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (-0.35 V) than bismuth (-0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.
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