Cite this article as: |
Jin-long Liu, Liang-xian Chen, Yu-ting Zheng, Jing-jing Wang, Zhi-hong Feng, and Cheng-ming Li, Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen, Int. J. Miner. Metall. Mater., 24(2017), No. 7, pp. 850-856. https://doi.org/10.1007/s12613-017-1469-3 |
Cheng-ming Li E-mail: chengmli@mater.ustb.edu.cn
[1] |
L.X. Chen, S. Liu, C.M. Li, Y.C. Wang, J.L. Liu, and J.J. Wei, Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering, Int. J. Miner. Metall. Mater., 22(2015), No. 10, p. 1108.
|
[2] |
F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Origin of surface conductivity in diamond, Phys. Rev. Lett., 85(2000), No. 16, p. 3472.
|
[3] |
C. Verona, W. Ciccognani, S. Colangeli, F.D. Pietrantonio, E. Giovine, E. Limiti, M. Marinelli, and G. Verona-Rinati, Gate-source distance scaling effects in H-terminated diamond MESFETs, IEEE Trans. Electron Devices, 62(2015), No. 4, p. 1150.
|
[4] |
T. Yoshiteru, K. Shiraishi, M. Kasu, and H. Sato, Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule, Surf. Sci., 609(2013), p. 203.
|
[5] |
H. Sato and M. Kasu, Maximum hole concentration for hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2, Diamond Relat. Mater., 31(2013), p. 47.
|
[6] |
L. Ley, J. Ristein, F. Meier, and P. Strobel, Surface conductivity of the diamond:a novel transfer doping mechanism, Physica B, 376-377(2006), p. 262.
|
[7] |
J.W. Liu, M.Y. Liao, M. Imura, H. Osato, E. Watanabe, and Y. Koide, Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric, Appl. Phys. Lett., 102(2013), art. No. 112910.
|
[8] |
M. Kasu, H. Sato, and K. Hirama, Thermal stabilization of hole channel on H-terminated diamond surface by using atomic layer-deposited Al2O3 overlayer and its electric properties, Appl. Phys. Express, 5(2012), No. 2, art. No. 025701.
|
[9] |
Y.G. Shi, Y. Hao, D. Wang, J.C. Zhang, P. Zhang, X.F. Shi, D. Han, Z. Chai, and J.D. Yan, Effects of the flow rate of hydrogen on the growth of graphene, Int. J. Miner. Metall. Mater., 22(2015), No. 1, p. 102.
|
[10] |
T. Ando, M. Ishii, M. Kamo, and Y. Sato, Diffuse reflectance infrared Fourier-transform study of the plasma hydrogenation of diamond surfaces, J. Chem. Soc. Faraday Trans., 89(1993), No. 3, p. 1383.
|
[11] |
F. Fizzotti, A. Lo Giudice, C. Manfredotti, C. Manfredotti, M. Castellino, and E. Vittone, Diamond surface conductivity after exposure to molecular hydrogen, Diamond Relat. Mater., 16(2007), No. 4-7, p. 836.
|
[12] |
C. Manfredotti, F. Fizzotti, A. Lo Giudice, C. Manfredotti, M. Castellino, P. Bonino, and E. Vittone, A comprehensive study on hydrogenated diamond surfaces as obtained by using molecular hydrogen, Diamond Relat. Mater., 17(2008), No. 7-10, p. 1154.
|
[13] |
C.M. Li, J.L. Liu, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, and H. Guo, An amazing semiconductor choice for high-frequency FET:H-terminated polycrystalline diamond film prepared by DC arc jet CVD, Phys. Status Solidi C, 11(2014), No. 11-12, p. 1692.
|
[14] |
J.L. Liu, C.M. Li, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, H. Guo, and F.X. Lv, Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD, Diamond Relat. Mater., 32(2013), p. 48.
|
[15] |
J.L. Liu, C.M. Li, J.C. Guo, R.H. Zhu, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, H. Guo, and F.X. Lv, Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films, Appl. Surf. Sci., 287(2013), p. 304.
|
[16] |
T. Ando, M. Ishii, M. Kamo, and Y. Sato, Thermal hydrogenation of diamond surfaces studied by diffuse reflectance Fourier-transform infrared, temperature-programmed desorption and laser Raman spectroscopy, J. Chem. Soc. Faraday Trans., 89(1993), No. 11, p. 1783.
|
[17] |
K. Hirama, H. Takayanagi, S. Yamauchi, J.H. Yang, H. Kawarada, and H. Umezawa, Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance, Appl. Phys. Lett., 92(2008), No. 11, art. No. 112107.
|
[18] |
C.E. Nebel, B. Rezek, and A. Zrenner, Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond, Diamond Relat. Mater., 13(2004), No. 11-12, p. 2031.
|
[19] |
V.I. Polyakov, N.M. Rossukanyi, A.I. Rukovishnikov, S.M. Pimenov, A.V. Karabutov, and V.I. Konov, Effects of post-growth treatment and coating with ultrathin metal layers on the band bending and field electron emission of diamond films, J. Appl. Phys., 84(1998), No. 5, p. 2882.
|