Jin-long Liu, Liang-xian Chen, Yu-ting Zheng, Jing-jing Wang, Zhi-hong Feng, and Cheng-ming Li, Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen, Int. J. Miner. Metall. Mater., 24(2017), No. 7, pp. 850-856. https://doi.org/10.1007/s12613-017-1469-3
Cite this article as:
Jin-long Liu, Liang-xian Chen, Yu-ting Zheng, Jing-jing Wang, Zhi-hong Feng, and Cheng-ming Li, Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen, Int. J. Miner. Metall. Mater., 24(2017), No. 7, pp. 850-856. https://doi.org/10.1007/s12613-017-1469-3
Research ArticleOpen Access

Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

+ Author Affiliations
  • Corresponding author:

    Cheng-ming Li    E-mail: chengmli@mater.ustb.edu.cn

  • Received: 30 November 2016Revised: 15 March 2017Accepted: 20 March 2017
  • The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm2·V-1·s-1 and greater than 5×1012 cm-2, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm2·V-1·s-1. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.
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  • [1]
    L.X. Chen, S. Liu, C.M. Li, Y.C. Wang, J.L. Liu, and J.J. Wei, Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering, Int. J. Miner. Metall. Mater., 22(2015), No. 10, p. 1108.
    [2]
    F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Origin of surface conductivity in diamond, Phys. Rev. Lett., 85(2000), No. 16, p. 3472.
    [3]
    C. Verona, W. Ciccognani, S. Colangeli, F.D. Pietrantonio, E. Giovine, E. Limiti, M. Marinelli, and G. Verona-Rinati, Gate-source distance scaling effects in H-terminated diamond MESFETs, IEEE Trans. Electron Devices, 62(2015), No. 4, p. 1150.
    [4]
    T. Yoshiteru, K. Shiraishi, M. Kasu, and H. Sato, Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule, Surf. Sci., 609(2013), p. 203.
    [5]
    H. Sato and M. Kasu, Maximum hole concentration for hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2, Diamond Relat. Mater., 31(2013), p. 47.
    [6]
    L. Ley, J. Ristein, F. Meier, and P. Strobel, Surface conductivity of the diamond:a novel transfer doping mechanism, Physica B, 376-377(2006), p. 262.
    [7]
    J.W. Liu, M.Y. Liao, M. Imura, H. Osato, E. Watanabe, and Y. Koide, Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric, Appl. Phys. Lett., 102(2013), art. No. 112910.
    [8]
    M. Kasu, H. Sato, and K. Hirama, Thermal stabilization of hole channel on H-terminated diamond surface by using atomic layer-deposited Al2O3 overlayer and its electric properties, Appl. Phys. Express, 5(2012), No. 2, art. No. 025701.
    [9]
    Y.G. Shi, Y. Hao, D. Wang, J.C. Zhang, P. Zhang, X.F. Shi, D. Han, Z. Chai, and J.D. Yan, Effects of the flow rate of hydrogen on the growth of graphene, Int. J. Miner. Metall. Mater., 22(2015), No. 1, p. 102.
    [10]
    T. Ando, M. Ishii, M. Kamo, and Y. Sato, Diffuse reflectance infrared Fourier-transform study of the plasma hydrogenation of diamond surfaces, J. Chem. Soc. Faraday Trans., 89(1993), No. 3, p. 1383.
    [11]
    F. Fizzotti, A. Lo Giudice, C. Manfredotti, C. Manfredotti, M. Castellino, and E. Vittone, Diamond surface conductivity after exposure to molecular hydrogen, Diamond Relat. Mater., 16(2007), No. 4-7, p. 836.
    [12]
    C. Manfredotti, F. Fizzotti, A. Lo Giudice, C. Manfredotti, M. Castellino, P. Bonino, and E. Vittone, A comprehensive study on hydrogenated diamond surfaces as obtained by using molecular hydrogen, Diamond Relat. Mater., 17(2008), No. 7-10, p. 1154.
    [13]
    C.M. Li, J.L. Liu, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, and H. Guo, An amazing semiconductor choice for high-frequency FET:H-terminated polycrystalline diamond film prepared by DC arc jet CVD, Phys. Status Solidi C, 11(2014), No. 11-12, p. 1692.
    [14]
    J.L. Liu, C.M. Li, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, H. Guo, and F.X. Lv, Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD, Diamond Relat. Mater., 32(2013), p. 48.
    [15]
    J.L. Liu, C.M. Li, J.C. Guo, R.H. Zhu, L.X. Chen, J.J. Wei, L.F. Hei, J.J. Wang, Z.H. Feng, H. Guo, and F.X. Lv, Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films, Appl. Surf. Sci., 287(2013), p. 304.
    [16]
    T. Ando, M. Ishii, M. Kamo, and Y. Sato, Thermal hydrogenation of diamond surfaces studied by diffuse reflectance Fourier-transform infrared, temperature-programmed desorption and laser Raman spectroscopy, J. Chem. Soc. Faraday Trans., 89(1993), No. 11, p. 1783.
    [17]
    K. Hirama, H. Takayanagi, S. Yamauchi, J.H. Yang, H. Kawarada, and H. Umezawa, Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance, Appl. Phys. Lett., 92(2008), No. 11, art. No. 112107.
    [18]
    C.E. Nebel, B. Rezek, and A. Zrenner, Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond, Diamond Relat. Mater., 13(2004), No. 11-12, p. 2031.
    [19]
    V.I. Polyakov, N.M. Rossukanyi, A.I. Rukovishnikov, S.M. Pimenov, A.V. Karabutov, and V.I. Konov, Effects of post-growth treatment and coating with ultrathin metal layers on the band bending and field electron emission of diamond films, J. Appl. Phys., 84(1998), No. 5, p. 2882.
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