Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers

Xiao-zhou Zhang; Yan-ping Xia; Xing Liu; Yi-ming Zhong; Hai-bo Zhao; Pei-hong Wang

doi:10.1007/s12613-019-1828-3

Volume 26 Issue 9

Sep. 2019

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Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2019 > 26(9): 1186-1193

Xiao-zhou Zhang, Yan-ping Xia, Xing Liu, Yi-ming Zhong, Hai-bo Zhao, and Pei-hong Wang, Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers, Int. J. Miner. Metall. Mater., 26(2019), No. 9, pp. 1186-1193. https://doi.org/10.1007/s12613-019-1828-3

Cite this article as:

Xiao-zhou Zhang, Yan-ping Xia, Xing Liu, Yi-ming Zhong, Hai-bo Zhao, and Pei-hong Wang, Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers, Int. J. Miner. Metall. Mater., 26(2019), No. 9, pp. 1186-1193. https://doi.org/10.1007/s12613-019-1828-3

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Research Article

Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers

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Corresponding author:
Pei-hong Wang E-mail: wangpeihong2002@ahu.edu.cn
Received: 29 November 2018; Revised: 11 February 2019; Accepted: 22 February 2019

Abstract

Abstract

This paper reports a piezoelectric nanogenerator (NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide (ZnO) thin film, a magnetron sputtering machine was used. Polymethyl methacrylate (PMMA) and aluminum-doped zinc oxide (AZO) were used as the insulating layer and the top electrode of the NG, respectively. The experimental results show that the ZnO thin films annealed at 150℃ exhibited the highest crystallinity among the prepared films and an optical band gap of 3.24 eV. The NG fabricated with an AZO/PMMA/ZnO/stainless steel configuration exhibited a higher output voltage than the device with an AZO/ZnO/PMMA/stainless steel configuration. In addition, the annealing temperature affected the open-circuit voltage of the NGs; the output voltage reached 3.81 V when the annealing temperature was 150℃. The open-circuit voltage of the prepared self-powered accelerometer increased linearly with acceleration. In addition, the small NG-based accelerometer, which exhibited excellent fatigue resistance, can be used for acceleration measurements of small and lightweight devices.
- piezoelectric ZnO thin film;
- RF magnetron sputtering;
- annealing temperature;
- accelerometer

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