Li Meng, Jun-ming Liu, Ning Zhang, Hao Wang, Yu Han, Cheng-xu He, Fu-yao Yang,  and Xin Chen, Simulation of recrystallization based on EBSD data using a modified Monte Carlo model that considers anisotropic effects in cold-rolled ultra-thin grain-oriented silicon steel, Int. J. Miner. Metall. Mater., 27(2020), No. 9, pp. 1251-1258. https://doi.org/10.1007/s12613-020-2102-4
Cite this article as:
Li Meng, Jun-ming Liu, Ning Zhang, Hao Wang, Yu Han, Cheng-xu He, Fu-yao Yang,  and Xin Chen, Simulation of recrystallization based on EBSD data using a modified Monte Carlo model that considers anisotropic effects in cold-rolled ultra-thin grain-oriented silicon steel, Int. J. Miner. Metall. Mater., 27(2020), No. 9, pp. 1251-1258. https://doi.org/10.1007/s12613-020-2102-4
Research Article

Simulation of recrystallization based on EBSD data using a modified Monte Carlo model that considers anisotropic effects in cold-rolled ultra-thin grain-oriented silicon steel

+ Author Affiliations
  • Corresponding authors:

    Li Meng    E-mail: li_meng@126.com

    Ning Zhang    E-mail: zhangn@126.com

  • Received: 5 September 2019Revised: 18 May 2020Accepted: 18 May 2020Available online: 21 May 2020
  • A Monte Carlo Potts model was developed to simulate the recrystallization process of a cold-rolled ultra-thin grain-oriented silicon steel. The orientation and image quality data from electron backscatter diffraction measurements were used as input information for simulation. Three types of nucleation mechanisms, namely, random nucleation, high-stored-energy site nucleation (HSEN), and high-angle boundary nucleation (HABN), were considered for simulation. In particular, the nucleation and growth behaviors of Goss-oriented ({011}<100>) grains were investigated. Results showed that Goss grains had a nucleation advantage in HSEN and HABN. The amount of Goss grains was the highest according to HABN, and it matched the experimental measurement. However, Goss grains lacked a size advantage across all mechanisms during the recrystallization process.

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