Toughness enhancement of single-crystal diamond by the homoepitaxial growth of periodic nitrogen-doped nano-multilayers

Yun Zhao; Juping Tu; Liangxian Chen; Junjun Wei; Jinlong Liu; Chengming Li

doi:10.1007/s12613-022-2497-1

Volume 30 Issue 4

Apr. 2023

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Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2023 > 30(4): 766-771

Yun Zhao, Juping Tu, Liangxian Chen, Junjun Wei, Jinlong Liu, and Chengming Li, Toughness enhancement of single-crystal diamond by the homoepitaxial growth of periodic nitrogen-doped nano-multilayers, Int. J. Miner. Metall. Mater., 30(2023), No. 4, pp. 766-771. https://doi.org/10.1007/s12613-022-2497-1

Cite this article as:

Yun Zhao, Juping Tu, Liangxian Chen, Junjun Wei, Jinlong Liu, and Chengming Li, Toughness enhancement of single-crystal diamond by the homoepitaxial growth of periodic nitrogen-doped nano-multilayers, Int. J. Miner. Metall. Mater., 30(2023), No. 4, pp. 766-771. https://doi.org/10.1007/s12613-022-2497-1

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Research Article

Toughness enhancement of single-crystal diamond by the homoepitaxial growth of periodic nitrogen-doped nano-multilayers

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Corresponding authors:
Jinlong Liu E-mail: liujinlong@ustb.edu.cn

Chengming Li E-mail: chengmli@mater.ustb.edu.cn
Received: 25 February 2022; Revised: 11 April 2022; Accepted: 14 April 2022; Available online: 15 April 2022

Abstract

Abstract

Periodic nitrogen-doped homoepitaxial nano-multilayers were grown by microwave plasma chemical vapor deposition. The residual time of gases (such as CH₄ and N₂) in the chamber was determined by optical emission spectroscopy to determine the nano-multilayer growth process, and thin, nanoscale nitrogen-doped layers were obtained. The highest toughness of 18.2 MPa∙m^1/2 under a Young’s modulus of 1000 GPa is obtained when the single-layer thickness of periodic nitrogen-doped nano-multilayers is about 96 nm. The fracture toughness of periodic nitrogen-doped CVD layer is about 2.1 times that of the HPHT seed substrate. Alternating tensile and compressive stresses are derived from periodic nitrogen doping; hence, the fracture toughness is significantly improved. Single-crystal diamond with a high toughness demonstrates wide application prospects for high-pressure anvils and single-point diamond cutting tools.
- microwave plasma chemical vapor deposition;
- diamond;
- fracture toughness;
- nitrogen doping

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References(26)

References

[1]	Q. Huang, D. Yu, B. Xu, et al., Nanotwinned diamond with unprecedented hardness and stability, Nature, 510(2014), No. 7504, p. 250. doi: 10.1038/nature13381
[2]	Q.L. Zhang, Q.L. Zhao, S. To, B. Guo, and W.J. Zhai, Diamond wheel wear mechanism and its impact on the surface generation in parallel diamond grinding of RB-SiC/Si, Diamond Relat. Mater., 74(2017), p. 16. doi: 10.1016/j.diamond.2017.01.019
[3]	B. Akbari and S. Miska, The effects of chamfer and back rake angle on PDC cutters friction, J. Nat. Gas Sci. Eng., 35(2016), p. 347. doi: 10.1016/j.jngse.2016.08.043
[4]	K. Miyazaki, T. Ohno, H. Karasawa, and H. Imaizumi, Performance of polycrystalline diamond compact bit based on laboratory tests assuming geothermal well drilling, Geothermics, 80(2019), p. 185. doi: 10.1016/j.geothermics.2019.03.006
[5]	L. Zheng, W.D. Wei, Y. Feng, et al., Drilling machinability of engineering ceramics under low-frequency axial vibration processing by sintering/brazing composite diamond trepanning bit, Ceram. Int., 45(2019), No. 9, p. 11905. doi: 10.1016/j.ceramint.2019.03.077
[6]	X.C. Wang, C.C. Wang, X.T. Shen, and F.H. Sun, Tribological properties of diamond films for high-speed drawing Al alloy wires using water-based emulsions, Tribol. Int., 123(2018), p. 92. doi: 10.1016/j.triboint.2018.03.004
[7]	Y.Z. Guo, J.L. Liu, J.W. Liu, et al., Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition, Int. J. Miner. Metall. Mater., 27(2020), No. 5, p. 703. doi: 10.1007/s12613-019-1944-0
[8]	P.P. Wang, G.Q. Chen, W.J. Li, et al., Microstructural evolution and thermal conductivity of diamond/Al composites during thermal cycling, Int. J. Miner. Metall. Mater., 28(2021), No. 11, p. 1821. doi: 10.1007/s12613-020-2114-0
[9]	X.L. Yuan, Y.T. Zheng, X.H. Zhu, et al., Recent progress in diamond-based MOSFETs, Int. J. Miner. Metall. Mater., 26(2019), No. 10, pp. 1195-1205. doi: 10.1007/s12613-019-1843-4
[10]	A. Banerjee, D. Bernoulli, H.T. Zhang, et al., Ultralarge elastic deformation of nanoscale diamond, Science, 360(2018), No. 6386, p. 300. doi: 10.1126/science.aar4165
[11]	J. Koehler, Attempt to design a strong solid, Phys. Rev. B, 2(1970), p. 547.
[12]	Y. Zhao, C.M. Li, J.L. Liu, et al., The interface and mechanical properties of a CVD single crystal diamond produced by multilayered nitrogen doping epitaxial growth, Materials, 12(2019), No. 15, art. No. 2492. doi: 10.3390/ma12152492
[13]	M.A. Lobaev, A.M. Gorbachev, S.A. Bogdanov, et al., NV-center formation in single crystal diamond at different CVD growth conditions, Phys. Status Solidi A, 215(2018), No. 22, art. No. 1800205. doi: 10.1002/pssa.201800205
[14]	M.A. Lobaev, A.M. Gorbachev, S.A. Bogdanov, et al., Influence of CVD diamond growth conditions on nitrogen incorporation, Diamond Relat. Mater., 72(2017), p. 1. doi: 10.1016/j.diamond.2016.12.011
[15]	M.A. Lobaev, A.M. Gorbachev, A.L. Vikharev, et al., Misorientation angle dependence of boron incorporation into CVD diamond delta layers, Phys. Status Solidi B, 256(2019), No. 7, art. No. 1800606. doi: 10.1002/pssb.201800606
[16]	N.V. Novikov and S.N. Dub, Fracture toughness of diamond single crystals, J. Hard Mater., 2(1991), No. 1, p. 3.
[17]	M.D. Drory, R.H. Dauskardt, A. Kant, and R.O. Ritchie, Fracture of synthetic diamond, J. Appl. Phys., 78(1995), No. 5, p. 3083. doi: 10.1063/1.360060
[18]	C.S. Yan, H. Mao, W. Li, J. Qian, Y.S. Zhao, and R. Hemley, Ultrahard diamond single crystals from chemical vapor deposition, Phys. Status Solidi A, 201(2004), No. 4, p. R25.
[19]	Q. Liang, C.S. Yan, Y.F. Meng, et al., Enhancing the mechanical properties of single-crystal CVD diamond, J. Phys. Condens. Matter, 21(2009), No. 36, art. No. 364215. doi: 10.1088/0953-8984/21/36/364215
[20]	X. Liu, Y.Y. Chang, S.N. Tkachev, C.R. Bina, and S.D. Jacobsen, Elastic and mechanical softening in boron-doped diamond, Sci. Rep., 7(2017), art. No. 42921. doi: 10.1038/srep42921
[21]	A. Tallaire, M. Lesik, V. Jacques, et al., Temperature dependent creation of nitrogen-vacancy centers in single crystal CVD diamond layers, Diamond Relat. Mater., 51(2015), p. 55. doi: 10.1016/j.diamond.2014.11.010
[22]	E.V. Bushuev, V.Y. Yurov, A.P. Bolshakov, et al., Express in situ measurement of epitaxial CVD diamond film growth kinetics, Diamond Relat. Mater., 72(2017), p. 61.[LinkOut]. doi: 10.1016/j.diamond.2016.12.021
[23]	K. Ohno, F. Joseph Heremans, L.C. Bassett, et al., Engineering shallow spins in diamond with nitrogen delta-doping, Appl. Phys. Lett., 101(2012), No. 8, art. No. 082413. doi: 10.1063/1.4748280
[24]	T.R. Anthony, Stresses generated by impurities in diamond, Diamond Relat. Mater., 4(1995), No. 12, p. 1346. doi: 10.1016/0925-9635(95)00317-7
[25]	S. Zhang, Thin Films and Coatings: Toughening and Toughness Characterization, CRC Press, Boca Raton, FL, 2015, p. 28.
[26]	Y. von Kaenel, J. Stiegler, J. Michler, and E. Blank, Stress distribution in heteroepitaxial chemical vapor deposited diamond films, J. Appl. Phys., 81(1997), No. 4, p. 1726. doi: 10.1063/1.364006