Spin Logic Devices Based on Negative Differential Resistance Enhanced Anomalous Hall Effect

With the fast development of spintronics, spin-based logic devices have emerged as promising candidates for next-generation computing technologies. This paper provides a comprehensive review of recent advancements in spin logic devices, particularly focusing on fundamental device concepts rooted in nanomagnets, magnetoresistive random-access memory (MRAM), spin-orbit torques (SOTs), electric-field modulation, and magnetic domain walls. We will present the thorough analysis of the operation principles of these spin logic devices. Additionally, we summarize recent advances in spin logic devices based on negative differential resistance enhanced anomalous Hall effect. These devices exhibit reconfigurable logic capabilities and integration of non-volatile data storage and computing functionalities. For the current-driven spin logic devices, negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits, enabling reconfigurable Boolean logic operations. Besides, voltage-driven spin logic devices employ another type of negative differential resistance elements to achieve logic functionalities with excellent cascading ability. By cascading several elementary logic gates, we can obtain the logic circuit of a full adder, verifying the potential of voltage-driven spin logic devices for implementing complex logic functions. This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising prospects they hold in shaping the future of emerging computing schemes.