Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect

Hongming Mou; Ziyao Lu; Yuchen Pu; Zhaochu Luo; Xiaozhong Zhang

doi:10.1007/s12613-024-2855-2

Volume 31 Issue 6

Jun. 2024

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Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2024 > 31(6): 1437-1448

Hongming Mou, Ziyao Lu, Yuchen Pu, Zhaochu Luo, and Xiaozhong Zhang, Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect, Int. J. Miner. Metall. Mater., 31(2024), No. 6, pp. 1437-1448. https://doi.org/10.1007/s12613-024-2855-2

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Hongming Mou, Ziyao Lu, Yuchen Pu, Zhaochu Luo, and Xiaozhong Zhang, Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect, Int. J. Miner. Metall. Mater., 31(2024), No. 6, pp. 1437-1448. https://doi.org/10.1007/s12613-024-2855-2

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Invited Review

Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect

+ Author Affiliations

Corresponding authors:
Zhaochu Luo E-mail: zhaochu.luo@pku.edu.cn

Xiaozhong Zhang E-mail: xzzhang@mail.tsinghua.edu.cn
Received: 10 December 2023; Revised: 27 January 2024; Accepted: 14 February 2024; Available online: 19 February 2024

Abstract

Abstract

Owing to rapid developments in spintronics, spin-based logic devices have emerged as promising tools for next-generation computing technologies. This paper provides a comprehensive review of recent advancements in spin logic devices, particularly focusing on fundamental device concepts rooted in nanomagnets, magnetoresistive random access memory, spin–orbit torques, electric-field modulation, and magnetic domain walls. The operation principles of these devices are comprehensively analyzed, and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized. These devices exhibit reconfigurable logic capabilities and integrate nonvolatile data storage and computing functionalities. For current-driven spin logic devices, negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits, enabling reconfigurable Boolean logic operations. Besides, voltage-driven spin logic devices employ another type of negative differential resistance element to achieve logic functionalities with excellent cascading ability. By cascading several elementary logic gates, the logic circuit of a full adder can be obtained, and the potential of voltage-driven spin logic devices for implementing complex logic functions can be verified. This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising prospects they offer for the future of emerging computing schemes.
- spin logic;
- spin–orbit torque;
- negative differential resistance;
- full-adder

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