Xueming Li, Size Yang,  and Xingfang Wu, Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 272-276. https://doi.org/10.1016/S1005-8850(06)60057-1
Cite this article as:
Xueming Li, Size Yang,  and Xingfang Wu, Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 272-276. https://doi.org/10.1016/S1005-8850(06)60057-1
Materials

Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

+ Author Affiliations
  • Corresponding author:

    Xueming Li    E-mail: snowlxm@126.com

  • Received: 16 December 2004
  • Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).
  • loading
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Share Article

    Article Metrics

    Article Views(274) PDF Downloads(7) Cited by()
    Proportional views

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return