Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 277-280. https://doi.org/10.1016/S1005-8850(06)60058-3
Cite this article as:
Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 277-280. https://doi.org/10.1016/S1005-8850(06)60058-3
Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 277-280. https://doi.org/10.1016/S1005-8850(06)60058-3
Citation:
Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing, 13(2006), No. 3, pp. 277-280. https://doi.org/10.1016/S1005-8850(06)60058-3
Bi2-xSbxTe3 thermoelectric films were electrochemically deposited from the solution containing Bi3+, HTeO2+ and SbO+. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi2-xSbxTe3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi2-xSbxTe3 films were measured. The results showed that the composition of the film electrodeposited at ?0.5 V is Bi0.5Sb1.5Te3 with the largest Seebeck coefficient of 213 μV·K-1.
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