Yang Gao, Shengping Wen, and Feng Pan, Creep rate sensitivities of materials by a depth-sensing indentation technique, J. Univ. Sci. Technol. Beijing, 13(2006), No. 4, pp. 308-312. https://doi.org/10.1016/S1005-8850(06)60064-9
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Yang Gao, Shengping Wen, and Feng Pan, Creep rate sensitivities of materials by a depth-sensing indentation technique, J. Univ. Sci. Technol. Beijing, 13(2006), No. 4, pp. 308-312. https://doi.org/10.1016/S1005-8850(06)60064-9
Yang Gao, Shengping Wen, and Feng Pan, Creep rate sensitivities of materials by a depth-sensing indentation technique, J. Univ. Sci. Technol. Beijing, 13(2006), No. 4, pp. 308-312. https://doi.org/10.1016/S1005-8850(06)60064-9
Citation:
Yang Gao, Shengping Wen, and Feng Pan, Creep rate sensitivities of materials by a depth-sensing indentation technique, J. Univ. Sci. Technol. Beijing, 13(2006), No. 4, pp. 308-312. https://doi.org/10.1016/S1005-8850(06)60064-9
The strain rate sensitivity to creep of single crystal Cu(110), metal tantalum, and 128oY-X LiNbO3 piezoelectric single crystal were measured at room temperature by MTS Nanoindenter XP. Among the three kinds of materials studied, Cu showed the highest degree of resistance to creep-induced deformation, which is followed by Ta, while the LiNbO3 single crystal deformed more readily than the others. The values of the steady-state strain rate sensitivities determined by the indentation methods are in the range of 0.002-0.006, 0.02-0.06 and 0.02-0.03 for Cu, Ta, and LiNbO3, respectively. The mechanisms for the indentation-induced creeping behavior and the factors that influenced the creeping are discussed.
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