Dequan Peng, Xinde Bai,  and Feng Pan, Irradiation damage simulation of Zircaloy-4 using argon ions bombardment, J. Univ. Sci. Technol. Beijing, 15(2008), No. 3, pp. 285-289. https://doi.org/10.1016/S1005-8850(08)60054-7
Cite this article as:
Dequan Peng, Xinde Bai,  and Feng Pan, Irradiation damage simulation of Zircaloy-4 using argon ions bombardment, J. Univ. Sci. Technol. Beijing, 15(2008), No. 3, pp. 285-289. https://doi.org/10.1016/S1005-8850(08)60054-7
Materials

Irradiation damage simulation of Zircaloy-4 using argon ions bombardment

+ Author Affiliations
  • To simulate irradiation damage, argon ion was implanted in the Zircaloy-4 with the fluence ranging from 1×1016 to 1×1017 cm-2, using accelerating implanter at an extraction voltage of 190 kV and liquid nitrogen temperature. Then the influence of argon ion implantation on the aqueous corrosion behavior of Zircaloy-4 was studied. The valence states of elements in the surface layer of the samples were analyzed using X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy (TEM) was used to examine the microstructure of the argon-implanted samples. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted Zircaloy-4 in 1 mol/L HzSO4 solution. It is found that there appear bubbles on the surface of the samples when the argon fluence is 1×1016 cm-2. The microstructure of argon-implanted samples changes from amorphous to partial amorphous, then to polycrystalline, and again to amorphous. The corrosion resistance of implanted samples linearly declines with the increase of fluence approximately, which is attributed to the linear increase of the irradiation damage.
  • loading
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Share Article

    Article Metrics

    Article Views(339) PDF Downloads(6) Cited by()
    Proportional views

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return