Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition

Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C₃N₄. The experimental X-ray diffraction spectra contain all the strong peaks of α-C₃N₄ and β-C₃N₄. The films are a mixture of α-C₃N₄ and β-C₃N₄. The observed Raman and FT-IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.