WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu, and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
Cite this article as:
WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu, and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu, and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
Citation:
WANG Jian-jun, LU Fan-xiu, LIU Ying-kai, YU Wen-xiu, and TONG Yu-mei, EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM, J. Univ. Sci. Technol. Beijing, 3(1996), No. 1, pp. 12-16.
Effect of direct current negative bias on diamond nucleation in microwave plasma assisted chemical vapor deposition system was discussed. The influence of the magnitude of negative bias value,bias duration and methane concentration in the gas mixture on nucleation density of diamond films was studied respectively. It is demonstrated that direct current negative bias can drastically enhance the diamond nucleation at a suitable value.Long bias duration and high methane concentration are helpful for diamond nucleation.