Atomic scale KMC simulation of {100} oriented CVD diamond film growth underlow substrate temperature―Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-containing systems and in C-H system as follows:(1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness;(2) Aomic Cl takes an active role for the growth of diamond film at low temperatues;(3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism,which disagrees with the predictions before;(4) The explanation of the exact role of atomic Cl is not provided in the simulation results.