Volume 12 Issue 5
Oct.  2005
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Xingqiao Ma, Sanqiang Shi, Senyang Hu, Chungho Woo, and Longqing Chen, Modeling of hydrogen diffusion process at a blunt notch in zirconium, J. Univ. Sci. Technol. Beijing , 12(2005), No. 5, pp.416-421.
Cite this article as: Xingqiao Ma, Sanqiang Shi, Senyang Hu, Chungho Woo, and Longqing Chen, Modeling of hydrogen diffusion process at a blunt notch in zirconium, J. Univ. Sci. Technol. Beijing , 12(2005), No. 5, pp.416-421.
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Modeling of hydrogen diffusion process at a blunt notch in zirconium

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This work was financially supported by the National Natural Science Foundation of China (No.50428101), the Research GrantsCouncil of Hong Kong (B-Q471), the Hong Kong Polytechnic University (G-V851), and the U.S. National Science Foundation (DMR96-33719).

  • The two-dimensional diffusion of interstitial hydrogen atoms in zirconium in a non-uniform stress field was simulated using the phase-field method. The interaction between hydrogen interstitials and the stress field was described by Khachaturyan’s elastic theory. The Cahn-Hilliard diffusion equation was then solved by an explicit finite difference method. The result shows that hydrogen atoms diffuse to the high-tensile hydrostatic region near the tip of the notch. The content of hydrogen near the tip of the notch increases by 13%, while the stress distribution caused by hydrogen interstitials around the notch is modified by only 0.7%.

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