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Volume 17 Issue 1
Feb.  2010
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Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang,  and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
Cite this article as:
Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang,  and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
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Electrodeposition and characterization of thermoelectric Bi2Se3 thin films

  • 通讯作者:

    Ke-feng Cai    E-mail: kfcai@tongji.edu.cn

  • Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.
  • Electrodeposition and characterization of thermoelectric Bi2Se3 thin films

    + Author Affiliations
    • Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.
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