Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang, and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
Cite this article as:
Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang, and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang, and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
Citation:
Xiao-long Li, Ke-feng Cai, Hui Li, Ling Wang, and Chi-wei Zhou, Electrodeposition and characterization of thermoelectric Bi2Se3 thin films, Int. J. Miner. Metall. Mater., 17(2010), No. 1, pp. 104-107. https://doi.org/10.1007/s12613-010-0118-x
Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.
Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.