Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

Wu-jun Qiu, Sheng-nan Zhang, Tie-jun Zhu, Xin-bing Zhao

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    Wu-jun Qiu, Sheng-nan Zhang, Tie-jun Zhu, and Xin-bing Zhao, Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp.489-493. https://dx.doi.org/10.1007/s12613-010-0346-0
    Wu-jun Qiu, Sheng-nan Zhang, Tie-jun Zhu, and Xin-bing Zhao, Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte, Int. J. Miner. Metall. Mater., 17(2010), No. 4, pp.489-493. https://dx.doi.org/10.1007/s12613-010-0346-0
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    Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

    • State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    基金项目: 

    This work was financially supported by the National Natural Science Foundation of China (No.50731006).

      通信作者:

      Xin-bing Zhao E-mail: zhaoxb@zju.edu.cn

    中文摘要

    A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (-0.35 V) than bismuth (-0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.

     

    Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

    Author Affilications

      • State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    • Funds: 

      This work was financially supported by the National Natural Science Foundation of China (No.50731006).

    • Received: 07 August 2009; Revised: 14 August 2009; Accepted: 19 August 2009;
    A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (-0.35 V) than bismuth (-0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.

     

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