Abstract: Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10¹⁴ cm^-3, a mobility of approximately 300 cm²·V^-1·s^-1, and a resistivity of approximately 10² Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H₂O₂:H₂O etchant. Textures with the sizes of approximately 1 µm were produced on 100, 110, and 111_Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.