Abstract: Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are introduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.