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Xiaoyan Liu, Fangyuan Sun, Wei Wang, Jie Zhao, Luhua Wang, Zhanxun Che, Guangzhu Bai, Xitao Wang, Jinguo Wang, Moon J. Kim, and Hailong Zhang, Effect of chromium interlayer thickness on interfacial thermal conductance across copper/diamond interface, Int. J. Miner. Metall. Mater., 29(2022), No. 11, pp.2020-2031. https://dx.doi.org/10.1007/s12613-021-2336-9
Xiaoyan Liu, Fangyuan Sun, Wei Wang, Jie Zhao, Luhua Wang, Zhanxun Che, Guangzhu Bai, Xitao Wang, Jinguo Wang, Moon J. Kim, and Hailong Zhang, Effect of chromium interlayer thickness on interfacial thermal conductance across copper/diamond interface, Int. J. Miner. Metall. Mater., 29(2022), No. 11, pp.2020-2031. https://dx.doi.org/10.1007/s12613-021-2336-9
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铬中间层厚度对铜/金刚石界面热导的影响

摘要: Cu/diamond复合材料由于具有较高的热导率和可调控的热膨胀系数,已成为电子封装热管理材料的研究热点。但是,通常情况下Cu与diamond之间的润湿性较差,且二者之间不发生化学反应,因此无法形成较强的界面结合,使得金刚石的导热潜能不能充分发挥。界面热导(h)对于Cu/diamond复合材料获得高导热性能起着决定性作用。通过金刚石表面金属化或金属基体合金化的方法加入碳化物形成元素,可以改善Cu与diamond的界面结合,同时有效调节Cu与diamond的声学性能失配,提高Cu/diamond复合材料的导热性能。本文采用磁控溅射法制备具有不同纳米厚度(5~150 nm)Cr中间层的Cu/Cr/diamond样品,利用时域热反射技术实验测量Cu与diamond的h值,分析Cr中间层厚度对Cu与diamond的h值的影响。研究结果表明,在Cu和diamond之间加入Cr中间层,能够解决Cu与diamond不润湿的问题,改善界面两侧材料的声学性能失配,从而有效提高Cu与diamond的h值。当添加5~150 nm厚度的Cr中间层时,Cu与diamond的h值比未添加Cr中间层时提高11%~374 %;当Cr中间层厚度为5 nm时,Cu与diamond的h最大值为270 MW⋅m−2⋅K−1。当Cr中间层厚度逐渐减小时,Cr层内的热载流子由电子主导向声子主导转变,利用Cr中间层的声子热传导途径,可以有效提升金属Cu与非金属金刚石之间的热传导效率。将Cr中间层厚度减小到21 nm以内,可以显著提高Cu与diamond之间的h值。本研究提供了一种调控金属/非金属异质界面热导的方法,并为Cu/diamond复合材料的界面设计提供理论参考。

 

Effect of chromium interlayer thickness on interfacial thermal conductance across copper/diamond interface

Abstract: The thermal conductivity of diamond particles reinforced copper matrix composite as an attractive thermal management material is significantly lowered by the non-wetting heterointerface. The paper investigates the heat transport behavior between a 200-nm Cu layer and a single-crystalline diamond substrate inserted by a chromium (Cr) interlayer having a series of thicknesses from 150 nm down to 5 nm. The purpose is to detect the impact of the modifying interlayer thickness on the interfacial thermal conductance (h) between Cu and diamond. The time-domain thermoreflectance measurements suggest that the introduction of Cr interlayer dramatically improves the h between Cu and diamond owing to the enhanced interfacial adhesion and bridged dissimilar phonon states between Cu and diamond. The h value exhibits a decreasing trend as the Cr interlayer becomes thicker because of the increase in thermal resistance of Cr interlayer. The high h values are observed for the Cr interlayer thicknesses below 21 nm since phononic transport channel dominates the thermal conduction in the ultrathin Cr layer. The findings provide a way to tune the thermal conduction across the metal/nonmetal heterogeneous interface, which plays a pivotal role in designing materials and devices for thermal management applications.

 

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