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Volume 29 Issue 11
Nov.  2022

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Wakul Bumrungsan, Kritsada Hongsith, Vasan Yarangsi, Pisith Kumnorkeaw, Sukrit Sucharitakul, Surachet Phaduangdhitidhada, and Supab Choopun, Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 perovskite solar cell by surface passivation using iso-butyl ammonium iodide, Int. J. Miner. Metall. Mater., 29(2022), No. 11, pp. 1963-1970. https://doi.org/10.1007/s12613-021-2382-3
Cite this article as:
Wakul Bumrungsan, Kritsada Hongsith, Vasan Yarangsi, Pisith Kumnorkeaw, Sukrit Sucharitakul, Surachet Phaduangdhitidhada, and Supab Choopun, Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 perovskite solar cell by surface passivation using iso-butyl ammonium iodide, Int. J. Miner. Metall. Mater., 29(2022), No. 11, pp. 1963-1970. https://doi.org/10.1007/s12613-021-2382-3
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研究论文

利用异丁基碘化铵表面钝化法提高Cs0.1(CH3NH3)0.9PbI3钙钛矿太阳能电池的效率

  • 通讯作者:

    Supab Choopun    E-mail: supab99@gmail.com

  • 本文通过使用异丁基碘化铵 (IBA)对Cs0.1(CH3NH3)0.9PbI3 薄膜进行表面钝化来提高Cs0.1(CH3NH3)0.9PbI3太阳能电池器件的效率。首先采用 FTO/SnO2/Cs0.1(CH3NH3)0.9PbI3(FTO,即氟掺杂氧化锡)和 IBA/Spiro-OMeTAD/Ag制备了n–i–p 结构的钙钛矿太阳能电池器件。然后,系统地研究了不同重量的 IBA 钝化对 Cs 掺杂钙钛矿太阳能电池 (PSC) 的影响,并与未钝化的器件进行了比较。研究发现,使用 5-mg IBA 钝化器件的功率转换效率 (PCE)为15.49%,高于非 IBA 钝化器件的12.64% 。同时,与 Cs 掺杂器件相比, 5-mg IBA 钝化器件的光伏参数明显得到改善。此外,晶体结构中PbI2相的减少、较低的电荷复合率、较低的电荷转移电阻和改善的钙钛矿薄膜接触角等结果进一步证实了IBA钝化器件具备更好性能。因此,对Cs0.1(CH3NH3)0.9PbI3进行 IBA 钝化是提高 Cs 掺杂钙钛矿太阳能电池效率的有前景的技术。
  • Research Article

    Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 perovskite solar cell by surface passivation using iso-butyl ammonium iodide

    + Author Affiliations
    • Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 solar cell devices was performed by using iso-butyl ammonium iodide (IBA) passivated on Cs0.1(CH3NH3)0.9PbI3 films. The n–i–p structure of perovskite solar cell devices was fabricated with the structure of FTO/SnO2/Cs0.1(CH3NH3)0.9PbI3 (FTO, i.e., fluorine doped tin oxide) and IBA/Spiro-OMeTAD/Ag. The effect of different weights of IBA passivated on Cs-doped perovskite solar cells (PSCs) was systematically investigated and compared with non-passivated devices. It was found that the 5-mg IBA-passivated devices exhibited a high power conversion efficiency (PCE) of 15.49% higher than 12.64% of non-IBA-passivated devices. The improvement of photovoltaic parameters of the 5-mg IBA-passivated device can be clearly observed compared to the Cs-doped device. The better performance of the IBA-passivated device can be confirmed by the reduction of PbI2 phase in the crystal structure, lower charge recombination rate, lower charge transfer resistance, and improved contact angle of perovskite films. Therefore, IBA passivation on Cs0.1(CH3NH)0.9PbI3 is a promising technique to improve the efficiency of Cs-doped perovskite solar cells.
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