Abstract:
A Z-scheme heterostructure of Mo, W co-doped BiVO
4 (Mo,W:BVO/BiOCl@C) was fabricated by a simple solid solution drying and calcination (SSDC) method. The heterostructure was characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), etc. Under visible light irradiation, Mo,W:BVO/BiOCl@C heterostructure exhibits excellent photoelectrochemical capability compared with other as-prepared samples. The photocurrent density and the incident photon-to-electron conversion efficiency (IPCE) are about 5.4 and 9.0 times higher than those of pure BiVO
4, respectively. The enhancement of the photoelectrochemical performance can be attributed to the construct of Z-scheme system, which is deduced from the radical trapping experiments. The Mo,W:BVO/BiOCl@C Z-scheme heterojunction enhances the visible-light absorption and reduces the recombination rate of charge carriers. This work provides an effective strategy to construct Z-scheme photoelectrodes for the application of photoelectrochemical water splitting.