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Dan Han, Xiaoru Liu, Donghui Li, Jiexu Shi, Yu Wang, Yuxuan Wang, Hongtao Wang, and Shengbo Sang, NO2 gas sensor with high selectivity and fast response based on Pt-loaded nanoporous GaN, Int. J. Miner. Metall. Mater., 32(2025), No. 4, pp.964-972. https://dx.doi.org/10.1007/s12613-024-2959-8
Dan Han, Xiaoru Liu, Donghui Li, Jiexu Shi, Yu Wang, Yuxuan Wang, Hongtao Wang, and Shengbo Sang, NO2 gas sensor with high selectivity and fast response based on Pt-loaded nanoporous GaN, Int. J. Miner. Metall. Mater., 32(2025), No. 4, pp.964-972. https://dx.doi.org/10.1007/s12613-024-2959-8
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基于铂负载纳米多孔氮化镓的高选择性快响应二氧化氮气体传感器

摘要: 本文以具有纳米孔结构的氮化镓(GaN)为基本材料,在多元醇的催化下采用热还原法将铂(Pt)还原,制备了一种Pt负载GaN的室温二氧化氮(NO2)气体传感器,并进行表征结果证实了两种材料的有效复合。Pt金属的溢出效应提供了更多的电子,加速了氧气(O2)分子在气敏材料表面的吸附,所产生的O2–协同表面电子与NO2同步反应,提高了传感器的响应度,同时这些电子占据了GaN表面的有效位点,使得其他极性的气体更难与材料表面产生吸附反应,因而提高了复合材料的选择性。此外,复合气敏材料相对纯GaN具有更大的比表面积,这也为气体分子的吸附提供了更多的有效位点。气敏测试结果表明,本文所制备的气体传感器在200 ppm~100 ppb的浓度范围内对NO2具有较好的响应梯度,在室温下对100 ppm NO2的响应时间和恢复时间分别为22和170 s,同时传感器在多种气体测试中对NO2表现出优异的选择性。GaN材料特殊的多孔形貌以及Pt金属优异的电学特性提高了传感器的气敏性能,Pt/GaN气体传感器设计为室温下高选择性快速响应NO2传感器提供了可靠方案。

 

NO2 gas sensor with high selectivity and fast response based on Pt-loaded nanoporous GaN

Abstract: In this work, we realized a room-temperature nitrogen dioxide (NO2) gas sensor based on a platinum (Pt)-loaded nanoporous gallium nitride (NP-GaN) sensing material using the thermal reduction method and coreduction with the catalysis of polyols. The gas sensor gained excellent sensitivity to NO2 at a concentration range of 200 ppm to 100 ppb, benefiting from the loading of Pt nanoparticles, and exhibited a short response time (22 s) and recovery time (170 s) to 100 ppm of NO2 at room temperature with excellent selectivity to NO2 compared with other gases. This phenomenon was attributed to the spillover effect and the synergic electronic interaction with semiconductor materials of Pt, which not only provided more electrons for the adsorption of NO2 molecules but also occupied effective sites, causing poor sites for other gases. The low detection limit of Pt/NP-GaN was 100 ppb, and the gas sensor still had a fast response 70 d after fabrication. Besides, the gas-sensing mechanism of the gas sensor was further elaborated to determine the reason leading to its improved properties. The significant spillover impact and oxygen dissociation of Pt provided advantages to its synergic electronic interaction with semiconductor materials, leading to the improvement of the gas properties of gas sensors.

 

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