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Volume 32 Issue 1
Jan.  2025
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文章导航 >  矿物冶金与材料学报（英文）  > 2025  >  32(1): 214-220
Chao Tan, Junling Lü, Chunchi Zhang, Dong Liang, Lei Yang, and Zegao Wang, Force and impulse multi-sensor based on flexible gate dielectric field effect transistor, Int. J. Miner. Metall. Mater., 32(2025), No. 1, pp. 214-220. https://doi.org/10.1007/s12613-024-2968-7
Cite this article as:
Chao Tan, Junling Lü, Chunchi Zhang, Dong Liang, Lei Yang, and Zegao Wang, Force and impulse multi-sensor based on flexible gate dielectric field effect transistor, Int. J. Miner. Metall. Mater., 32(2025), No. 1, pp. 214-220. https://doi.org/10.1007/s12613-024-2968-7
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研究论文

基于柔性栅介电层场效应晶体管的压力与冲量传感器

  • 1)

    四川大学材料科学与工程学院, 成都 610065, 中国

  • 2)

    中国电子科技集团第五十四研究所, 石家庄 050081, 中国



    • * 共同第一作者
  • 通讯作者:

    王泽高    E-mail: zegao@scu.edu.cn

文章亮点

  • (1) 实现对静态/动态力引起的冲量脉冲变化的实时监测。
  • (2) 压力传感响应灵敏度可达8000%，功耗低至30 nW。
  • (3) 器件在空气中放置60 d几乎没有性能损失。
  • (4) 基于该器件的4×1传感阵列，实现对荷载的定量和定位监测。
  • 力学传感器在工业生产、电子信息、医疗卫生等诸多领域发挥着重要作用。基于二维材料的场效应晶体管（2D-FET）传感器具有纳米级尺寸、低功耗和高响应精度等优势，是力学传感器应用领域的研究热点。然而，这些力学传感器很少具备对冲量的检测能力。冲量检测是对过程量的检测，表示力在一段时间内对受力体的累积作用。因此，我们利用聚甲基丙烯酸甲酯（PMMA）作为栅极介电层，二维二硫化钼（2D-MoS2）作为沟道材料，设计并制备了柔性栅介电层场效应晶体管，用于压力与冲量的传感监测。系统地研究了该传感器对静态/动态荷载的响应作用，通过计算拟合获取了源漏电流信号（Ids）与冲量监测信号$( \overrightarrow{I} )$之间的转换系数。该传感器工作能耗低至30 nW，响应度达到8000%，在空气中放置60 d无性能损失。此外，基于该传感器的传感阵列实现了对压力荷载的定量和定位监测。
    • Research Article

    Force and impulse multi-sensor based on flexible gate dielectric field effect transistor

    + Author Affiliations
      Abstract
    • Nowadays, force sensors play an important role in industrial production, electronic information, medical health, and many other fields. Two-dimensional material-based filed effect transistor (2D-FET) sensors are competitive with nano-level size, lower power consumption, and accurate response. However, few of them has the capability of impulse detection, which is a path function, expressing the cumulative effect of the force on the particle over a period of time. Herein, we fabricated the flexible polymethyl methacrylate (PMMA) gate dielectric MoS2-FET for force and impulse sensor application. We systematically investigated the responses of the sensor to constant force and varying forces, and achieved the conversion factors of the drain current signals (Ids) to the detected impulse ($ \overrightarrow{I} $). The applied force was detected and recorded by Ids with a low power consumption of ~30 nW. The sensitivity of the device can reach ~8000% and the 4 × 1 sensor array is able to detect and locate the normal force applied on it. Moreover, there was almost no performance loss for the device as left in the air for two months.
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