Force and impulse multi-sensor based on flexible gate dielectric field effect transistor

Nowadays, force sensors play an important role in industrial production, electronic information, medical health and many other fields. Two-dimensional material-based filed effect transistor (2D-FET) sensors are competitive with nano-level size, lower power consumption and accurate response. However, few of them has the capability of impulse detection, which is a path function, expressing the cumulative effect of the force on the particle over a period of time. Herein, we fabricated the flexible PMMA gate dielectric MoS2-FET for force and impulse sensor application. We systematically investigated the responses of the sensor to constant force and varying forces, and achieved the conversion factors of the drain current signals (Ids) to the detected impulse (I ⃗). The applied force was detected and recorded by Ids with a low power consumption of ~30 nW. The sensitivity of the device can reach ~8000% and the 4×1 sensor array is able to detect and locate the normal force applied on it. Moreover, there was almost no performance loss for the device as left in the air for two months.