Abstract: Perovskite memristors are usually fabricated by the traditional spin-coating method in a glove box, restricting them to small-area films. Herein, we blade-coated large-area three dimensional (3D) Cs_0.09FA_0.91PbI₃ and one dimensional (1D) (CH₃)₃SPbI₃ surface under air condition to create a heterojunction synaptic memristor with enhanced stability and functionality. The 3D/1D heterojunction memristor exhibits excellent resistive switching properties, with on/off ratio increasing from 10 to over 70, remaining stable after 300 cycles at 0.5 V, and retaining resistance states for over 10³ s. Blade coating, a solution-based technique compatible with roll-to-roll processing, enables large-area fabrication (10 cm ×10 cm substrates) with cost-effectiveness, supporting scalability for mass production. The device successfully emulated synaptic plasticity, including long-term potentiation, long-term depression, paired-pulse facilitation, and spike frequency/voltage-dependent plasticity.