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Noorhan F. AlShaikh Mohammad, Ebrahim Nemati-Kande, Ahmad A. Mousa, Mohammed S. Abu-Jafar, Asif Hosen, N.S. Abd EL-Gawaad, and Jihad Asad, First-principles investigation of structural, optoelectronic, mechanical, thermodynamic and hydrogen storage properties of Si-based XCsSiH6 (X = K, Rb) hydrides, Int. J. Miner. Metall. Mater., (2026). https://doi.org/10.1007/s12613-026-3417-6
Noorhan F. AlShaikh Mohammad, Ebrahim Nemati-Kande, Ahmad A. Mousa, Mohammed S. Abu-Jafar, Asif Hosen, N.S. Abd EL-Gawaad, and Jihad Asad, First-principles investigation of structural, optoelectronic, mechanical, thermodynamic and hydrogen storage properties of Si-based XCsSiH6 (X = K, Rb) hydrides, Int. J. Miner. Metall. Mater., (2026). https://doi.org/10.1007/s12613-026-3417-6
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基于第一性原理的硅基XCsSiH6(X = K,Rb)氢化物结构、光电、机械、热力学和储氢性能

摘要: 在这项研究中,采用第一性原理密度泛函理论(DFT)计算来研究XCsSiH6(X = K,Rb)的结构、光电、机械、热力学和储氢性能。通过碱金属阳离子稳定氢原子形成的离散SiH6八面体,结构优化后证实是稳定的立方F \overline43 m对称结构。这两种化合物都表现出热稳定性和动力学稳定性。KCsSiH6和RbCsSiH6的储氢容量分别为2.94wt%和2.40wt%。电子能带结构分析表明,间接带隙为3.14 eV(KCsSiH6)和3.17 eV(RbCsSiH6),氢主要贡献于价带最大值(VBM),Cs/Rb/K原子主要贡献于导带最小值(CBM)。介电响应、吸收和反射率的光学特性分析显示了良好的紫外线活性,表明其适用于光电和紫外线过滤应用。同时这两种氢化物都很脆,但弹性各向同性,KCsSiH6的硬度略低于RbCsSiH6。综合热力学分析表明,在高达800 K的温度下,熵、热容和吉布斯自由能都有良好的变化,表明这一系化合物具有明显的热稳定性。总之,XCsSiH6氢化物是稳定的半导体,具有适中的储氢能力和理想的光学性能,适用于各种能源和电子应用。

 

First-principles investigation of structural, optoelectronic, mechanical, thermodynamic and hydrogen storage properties of Si-based XCsSiH6 (X = K, Rb) hydrides

Abstract: In this study, first-principles density functional theory (DFT) calculations are employed to investigate the structural, optoelectronic, mechanical, thermodynamic, and hydrogen storage properties of XCsSiH6 (X = K, Rb). The hydrogen atoms form discrete SiH6 octahedra stabilized by alkali metal cations, confirming a stable cubic F \bar43 m symmetry upon structural optimization. Both compounds exhibit both thermal and dynamical stability. The calculated gravimetric hydrogen storage capacities are 2.94wt% for KCsSiH6 and 2.40wt% for RbCsSiH6. Electronic band structure analysis indicates indirect band gaps of 3.14 eV (KCsSiH6) and 3.17 eV (RbCsSiH6), with hydrogen contributing mainly to the valence band maximum (VBM) and Cs/Rb/K atoms to the conduction band minimum (CBM). Optical property analyses of the dielectric response, absorption, and reflectivity show pronounced ultraviolet activity, suggesting suitability for optoelectronic and UV-filtering applications. Both hydrides are found to be brittle yet elastically isotropic, with KCsSiH6 being slightly less stiff than RbCsSiH6. Comprehensive thermodynamic analysis demonstrates favorable variations in entropy, heat capacity, and Gibbs free energy up to 800 K, indicating the pronounced thermal stability of the investigated systems. Overall, XCsSiH6 hydrides appear to be stable semiconductors with moderate hydrogen storage capacity and desirable optical properties, suitable for various energy and electronic applications.

 

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